Stacking growth of in-plane InAs quantum-dot superlattices on GaAsSb/GaAs(001) for solar cell applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1885-1888

  Inaji, Toshihiko ^a   Ohta, Jun ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION POWER; GAAS(001); GROWTH METHOD; HIGH DOT DENSITY; HIGH ENERGY; IN-PLANE; INAS; INAS QUANTUM DOTS; PL SPECTRA; QUANTUM DOT SUPERLATTICES; SELF-ASSEMBLED; SOLAR-CELL APPLICATIONS; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRANSKI-KRASTANOV MODE; SUPER-LATTICE STRUCTURES; ULTRAHIGH DENSITY;

COALESCENCE; GALLIUM ALLOYS; HIGH ENERGY PHYSICS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS; SUPERLATTICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650087212     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616259     Document Type: Conference Paper

References (6)

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2. Y. Okada et al., 20th Euro PVSC (2005).
3. K. Yamaguchi, and T. Kanto, "Self-assembled InAs quantum dots on GaSb/GaAs(001) layers by molecular beam epitaxy", J. Cryst. Growth, 275, 2005, e2269.
4. T. Kanto, and K. Yamaguchi, "In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs(001) by molecular beam epitaxy", J. Appl. Phys., 101, 2007, 094901.
5. S. Lan, K. Akahane, H-Z. Song, Y. Okada, and M. Kawabe, "Capture, relaxation, and recombination in two-dimensional quantum-dot superlattices", Phys. Rev. B, 61, 2000, 16847.
6. R. Oshima et al.," Multiple stacking of self-assembled InAs quantum dots embedded by GaNAs strain compensating layers", J. Appl. Phys., 100, 2006, 083110.