Effect of annealing on ferroelectric properties of lanthanum modified lead zirconate titanate thin films

Integrated Ferroelectrics

Volumn 130, Issue 1, 2011, Pages 73-83

  Harshan, V N ^a   Kotru, Sushma ^a  

^a University of Alabama   (United States)

Author keywords

Doping; Ferroelectric film; La; leakage current; PLZT

Indexed keywords

ANNEALING PROCESS; CHEMICAL FORMULAE; CRYSTALLINITIES; FERROELECTRIC PROPERTY; FERROELECTRIC TESTERS; LANTHANUM-MODIFIED LEAD ZIRCONATE TITANATE; LOW-LEAKAGE CURRENT; METAL ORGANIC DECOMPOSITION TECHNIQUES; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC RESPONSE; PLZT; PLZT FILMS; POST DEPOSITION ANNEALING; RAPID ANNEALING; SPIN-COATING METHOD; STRUCTURE AND MORPHOLOGY; TEMPERATURE RANGE;

ANNEALING; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); FERROELECTRICITY; FILM PREPARATION; LANTHANUM; LANTHANUM ALLOYS; LEAD; LEAKAGE CURRENTS; ORGANOMETALLICS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DOPING; SOLS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 84857805275     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2011.637011     Document Type: Article

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