Stability of photovoltage and trap of light-induced charges in ferroelectric W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 thin films

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Qin, Meng ^a,b   Yao, Kui ^b   Liang, Yung C ^a   Gan, Bee Keen ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGE TRAPPING; DOPING (ADDITIVES); ULTRAVIOLET RADIATION;

ELECTRODE GAP; INTERFACIAL EFFECTS; PHOTOVOLTAGE; SCHOTTKY BARRIERS;

FERROELECTRIC THIN FILMS;

EID: 34548463438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2776855     Document Type: Article

References (32)

1. V. M. Fridkin, Photoferroelectrics (Springer, Berlin, 1979), Vol. 9, pp. 85-113.
2. C. S. Tu, F. T. Wang, R. R. Chien, V. H. Schmidt, C. M. Hung, and C. T. Tseng, Appl. Phys. Lett. 88, 032902 (2006).
3. A. M. Glass, D. Linde, and T. J. Negran, Appl. Phys. Lett. 25, 233 (1974).
4. P. S. Brody, U.S. Patent No. 4051465 (27 September 1977).
5. S. Y. Chu, Y. Zhou, and K. Uchino, Adv. Perform. Mater 1, 129 (1994).
6. P. Poosanaas, K. Tonooka, and K. Uchino, Mechatronics 10, 467 (2000).
7. L. Pintilie, M. Alexe, A. Pignolet, and D. Hesse, Appl. Phys. Lett. 73, 342 (1998).
8. L. Pintilie and I. Pintilie, Mater. Sci. Eng., B 80, 388 (2001).
9. M. Ichiki, Y. Morikawa, T. Nakada, and R. Maeda, Jpn. J. Appl. Phys., Part 1 41, 6993 (2002).
10. G. Suchaneck and G. Gerlach, Phys. Status Solidi A 185, 115 (2001).
11. V. K. Yarmarkin, B. M. Gol'tsman, M. M. Kazanin, and V. V. Lemanov, Phys. Solid State 42, 522 (2000).
12. A. L. Kholkin, V. K. Yarmarkin, B. M. Goltsman, and J. L. Baptista, Integr. Ferroelectr. 35, 261 (2001).
13. K. Yao, B. K. Gan, M. Chen, and S. Shannigrahi, Appl. Phys. Lett. 87, 212906 (2005).
14. P. S. Brody, Appl. Phys. Lett. 38, 153 (1981).
15. B. I. Sturman and V. M. Fridkin, The Photovoltaic and Photorefractive Effects in Noncentrosymmetric Materials (Gordon and Breach, Philadelphia, 1993), Vol. 8, pp. 97-134.
16. V. M. Fridkin, Crystallogr. Rep. 46, 654 (2001).
17. S. Shannigrahi and K. Yao, Appl. Phys. Lett. 86, 092901 (2005).
18. M. Qin, K. Yao, Y. C. Liang, and S. Shannigrahi, J. Appl. Phys. 101, 014104 (2007).
19. Y. Masuda and T. Nozaka, Jpn. J. Appl. Phys., Part 1 43, 6576 (2004).
20. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000), Chap. 5, pp 97-98.
21. J. Robertson and C. W. Chen, Appl. Phys. Lett. 74, 1168 (1999).
22. J. F. Scott, Jpn, Jpn. J. Appl. Phys., Part 1 38, 2272 (1999).
23. M. Dawber, J. F. Scott, and A. J. Hartmann, J. Eur. Ceram. Soc. 21, 1633 (2001).
24. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
25. W. L. Warren and D. Dimos, Appl. Phys. Lett. 64, 866 (1994).
26. I. Baturin, N. Menou, V. Shur, C. Muller, D. Kuznetsov, J. L. Hodeau, and A. Sternberg, Mater. Sci. Eng., B 120, 141 (2005).
27. D. Dimos, W. L. Warren, M. B. Sinclair, B. A. Tuttle, and R. W. Schwartz, J. Appl. Phys. 76, 4305 (1994).
28. L. Pintilie and M. Alexe, J. Appl. Phys. 98, 124103 (2005).
29. L. Pintilie, M. Lisca, and M. Alexe, Integr. Ferroelectr. 73, 37 (2005).
30. J. C. Shin, J. Park, C. S. Hwang, and H. J. Kim, J. Appl. Phys. 86, 506 (1999).
31. J. D. Baniecki, T. Shioga, K. Kurihara, and N. Kamehara, J. Appl. Phys. 94, 6741 (2003).
32. G. E. Pike, W. L. Warren, D. Dimos, B. A. Tuttle, R. Ramesh, J. Lee, V. G. Keramidas, and J. T. Evans, Jr., Appl. Phys. Lett. 66, 484 (1995).