Preparation and piezoelectric properties of sol-gel-derived Nb-doped PZT films for MEMS applications

Integrated Ferroelectrics

Volumn 80, Issue 1, 2006, Pages 155-162

  Kwok, K W ^a   Kwok, K P ^a   Tsang, R C W ^a   Chan, H L W ^a   Choy, C L ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Nb dopant; Piezoelectric properties; PZT thin films

Indexed keywords

CERAMIC MATERIALS; CRYSTALLINE MATERIALS; DIELECTRIC PROPERTIES; LEAD COMPOUNDS; MICROELECTROMECHANICAL DEVICES; NIOBIUM; PEROVSKITE; SEMICONDUCTOR DOPING; SOL-GELS; THIN FILMS;

NB DOPANTS; PIEZOELECTRIC PROPERTIES; PZT THIN FILMS; TRANSVERSE PIEZOELECTRIC PROPERTIES;

PIEZOELECTRICITY;

EID: 33745737039     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657377     Document Type: Article

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