Electro-optic properties of lanthanum-modified lead zirconate titanate thin films epitaxially grown by the advanced sol-gel method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Uchiyama, Kiyoshi ^a   Kasamatsu, Atsushi ^a,b   Otani, Yohei ^a,c   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Electro optic coefficients; Epitaxial growth; Lanthanum modified lead zirconate titanate; PLZT; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DATA COMMUNICATION SYSTEMS; ELECTROOPTICAL EFFECTS; EPITAXIAL GROWTH; LANTHANUM COMPOUNDS; SOL-GEL PROCESS;

ELECTRO-OPTIC COEFFICIENTS; LANTHANUM-MODIFIED LEAD ZIRCONATE TITANATE; PLZT DEPOSITION;

THIN FILMS;

EID: 34547855169     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L244     Document Type: Article

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