Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Viti, Leonardo ^a   Vitiello, Miriam S ^a   Ercolani, Daniele ^a   Sorba, Lucia ^a   Tredicucci, Alessandro ^a  

^a CNR   (Italy)

Author keywords

Field effect transistors; InAs; Nanowires; Se doping; Transport

Indexed keywords

ACTIVE ELEMENTS; ELECTRICAL MEASUREMENT; GATE FIELD; INAS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; LOW RESISTIVITY; ORDERS OF MAGNITUDE; PEAK TRANSCONDUCTANCE; SE-DOPING; SELENIDES; TERAHERTZ DETECTORS; TRANSISTOR CHANNELS; TRANSPORT;

CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; MESFET DEVICES; NANOWIRES;

TRANSPORT PROPERTIES;

EID: 84857751272     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-159     Document Type: Article

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