Growth of AlN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 415-418

  Sumathi, R R ^a   Barz, R U ^b   Gigler, A M ^a   Straubinger, T ^b   Gille, P ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b SICRYSTAL AG   (Germany)

Author keywords

aluminium nitride; growth mode; single crystals; structural quality

Indexed keywords

4H-SIC SUBSTRATE; ALN; AS-GROWN; BASAL PLANES; BULK SINGLE CRYSTALS; DOUBLE CRYSTAL X-RAY DIFFRACTION; ETCH PIT DENSITY; GASPHASE; GROWN CRYSTALS; GROWTH CONDITIONS; GROWTH MODE; GROWTH MODES; GROWTH PROCESS; HEXAGONAL SYMMETRY; HIGH QUALITY CRYSTALS; PHONON MODE; ROCKING CURVES; SPIRAL GROWTH; STEP-FLOW GROWTH; STRUCTURAL QUALITIES; THIN LAYERS;

ALUMINUM; ALUMINUM NITRIDE; CRYSTAL SYMMETRY; DIAMOND FILMS; DISLOCATIONS (CRYSTALS); NITRIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON CARBIDE; WET ETCHING; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 84857747274     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100348     Document Type: Article

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