SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 6, 2009, Pages

Analysis of basal plane bending and basal plane dislocations in 4H-SiC single crystals

(10) Ohtani, Noboru a Katsuno, Masakazu b Fujimoto, Tatsuo b Nakabayashi, Masashi b Tsuge, Hiroshi b Yashiro, Hirokatsu b Aigo, Takashi b Hirano, Hosei b Hoshino, Taizo b Ohashi, Wataru b

a KWANSEI GAKUIN UNIVERSITY (Japan)

b NIPPON STEEL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE DISLOCATIONS; BASAL PLANES; DEFECT-SELECTIVE ETCHING; PEAK SHIFT; PHYSICAL VAPOR TRANSPORT GROWTHS; QUANTITATIVE ANALYSIS; THERMOELASTIC STRESS; THREADING SCREW; X RAY ROCKING CURVE;

DEFECT DENSITY; DISLOCATIONS (CRYSTALS); SILICON CARBIDE; THERMOELASTICITY;

SINGLE CRYSTALS;

EID: 68649086949 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.065503 Document Type: Article

Times cited : (29)

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