Structural quality and ordering of MBE grown AlxGa1-xN-layers

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 9-11

  Kirste, L ^a   Ebling, D G ^a   Haug, Ch ^a   Brenn, R ^a   Benz, K W ^a   Tillmann, K ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

AlxGa1 xN ordering; AlN; Dislocation density; RBS channeling

Indexed keywords

DISLOCATIONS (CRYSTALS); IMAGE ANALYSIS; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035933080     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00770-4     Document Type: Article

References (8)