Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1545-1547

  Dalmau, Rafael ^a   Moody, Baxter ^a   Xie, Jinqiao ^a   Collazo, Ramõn ^b   Sitar, Zlatko ^b  

^a HexaTech Inc   (United States)

^b North Carolina State University   (United States)

Author keywords

aluminum nitride; dislocations; etch pits; growth from vapor; low angle grain boundaries; single crystals

Indexed keywords

ALN; ALN SINGLE CRYSTALS; BRIGHT FIELDS; DEFECT-SELECTIVE ETCHING; DISLOCATION ARRAYS; ETCH PITS; EXTENDED DEFECT; GROWTH CELLS; GROWTH FROM VAPOR; HIGH-RESOLUTION X-RAY DIFFRACTION; LOW ANGLE GRAIN BOUNDARIES; PHYSICAL VAPOR TRANSPORT; RADIAL TEMPERATURE GRADIENTS;

ALUMINUM NITRIDE; DEFECT DENSITY; DEFECTS; DIFFRACTIVE OPTICS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NITRIDES; VAPORS; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 79960097164     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000957     Document Type: Article

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