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Volumn 163, Issue 1, 2012, Pages 159-164

Enhancing hydrogen sensitivity of porous GaN by using simple and low cost photoelectrochemical etching techniques

Author keywords

Hydrogen sensor; Porous GaN; Schottky diodes; Sensitivity

Indexed keywords

AS-GROWN; BARRIER HEIGHTS; COMPARATIVE STUDIES; HIGH UNIFORMITY; HYDROGEN FLOW RATE; HYDROGEN GAS SENSORS; HYDROGEN SENSITIVITY; HYDROGEN SENSOR; IDEALITY FACTORS; LOW COSTS; PHOTO-ELECTROCHEMICAL ETCHING; POROUS GAN; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SENSITIVITY; SERIES RESISTANCES;

EID: 84857641912     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.01.029     Document Type: Article
Times cited : (24)

References (32)
  • 1
    • 0029236865 scopus 로고
    • Influence of humidity on transport in porous silicon
    • J.J. Mares, J. Kristofik, and E. Hulicius Influence of humidity on transport in porous silicon Thin Solid Films 255 1995 272 275
    • (1995) Thin Solid Films , vol.255 , pp. 272-275
    • Mares, J.J.1    Kristofik, J.2    Hulicius, E.3
  • 2
    • 0001753504 scopus 로고    scopus 로고
    • The structural and luminescence properties of porous silicon
    • A.G. Cullis, L.T. Canham, and P.D.G. Calcott The structural and luminescence properties of porous silicon J. Appl. Phys. 82 1997 909 965 (Pubitemid 127589936)
    • (1997) Journal of Applied Physics , vol.82 , Issue.3 , pp. 909-965
    • Cullis, A.G.1    Canham, L.T.2    Calcott, P.D.J.3
  • 3
    • 77954315601 scopus 로고    scopus 로고
    • Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching
    • K. Al-heuseen, M.R. Hashim, and N.K. Ali Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching Physica B 405 2010 3176
    • (2010) Physica B , vol.405 , pp. 3176
    • Al-Heuseen, K.1    Hashim, M.R.2    Ali, N.K.3
  • 4
    • 0032629798 scopus 로고    scopus 로고
    • Porous silicon-mechanisms of growth and applications
    • V. Parkhutik Porous silicon-mechanisms of growth and applications Solid State Electron 43 1999 1121 1141
    • (1999) Solid State Electron , vol.43 , pp. 1121-1141
    • Parkhutik, V.1
  • 5
    • 0025418891 scopus 로고
    • Investigations of porous silicon for vapor sensing
    • R.C. Anderson, R.S. Muller, and C.W. Tobias Investigations of porous silicon for vapor sensing Sens. Actuators A 21 23 1990 835 839
    • (1990) Sens. Actuators A , vol.21 , Issue.23 , pp. 835-839
    • Anderson, R.C.1    Muller, R.S.2    Tobias, C.W.3
  • 6
    • 77950924122 scopus 로고    scopus 로고
    • Porous semiconductors: Advanced material for gas sensor applications
    • G. Korotcenkov, and B.K. Cho Porous semiconductors: advanced material for gas sensor applications Crit. Rev. Solid State Mater. Sci. 35 2010 1 37
    • (2010) Crit. Rev. Solid State Mater. Sci. , vol.35 , pp. 1-37
    • Korotcenkov, G.1    Cho, B.K.2
  • 9
    • 0037197294 scopus 로고    scopus 로고
    • Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications
    • DOI 10.1016/S0924-4247(01)00885-8, PII S0924424701008858
    • E.J. Connolly, G.M. O'Halloran, H.T.M. Pham, P.M. Sarro, and P.J. French Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications Sens. Actuators A 99 2002 25 30 (Pubitemid 34684687)
    • (2002) Sensors and Actuators, A: Physical , vol.99 , Issue.1-2 , pp. 25-30
    • Connolly, E.J.1    O'Halloran, G.M.2    Pham, H.T.M.3    Sarro, P.M.4    French, P.J.5
  • 11
    • 34249089834 scopus 로고    scopus 로고
    • The study of Pt Schottky contact on porous GaN for hydrogen sensing
    • DOI 10.1016/j.tsf.2007.02.096, PII S0040609007002696
    • F.K. Yam, Z. Hassan, and A.Y. Hudeish The study of Pt Schottky contact on porous. GaN for hydrogen sensing Thin Solid Films 515 2007 7337 7341 (Pubitemid 46782912)
    • (2007) Thin Solid Films , vol.515 , Issue.18 , pp. 7337-7341
    • Yam, F.K.1    Hassan, Z.2    Hudeish, A.Y.3
  • 12
    • 34548507284 scopus 로고    scopus 로고
    • Schottky diode based on porous GaN for hydrogen gas sensing application
    • DOI 10.1016/j.apsusc.2007.05.071, PII S0169433207007726
    • F.K. Yam, and Z. Hassan Schottky diode based on porous GaN for hydrogen gas sensing application Appl. Surf. Sci. 253 2007 9525 9528 (Pubitemid 47374862)
    • (2007) Applied Surface Science , vol.253 , Issue.24 , pp. 9525-9528
    • Yam, F.K.1    Hassan, Z.2
  • 14
    • 4444379826 scopus 로고    scopus 로고
    • 2, CO and high vacuum regeneration of ozone poisoned pseudo-Schottky Pd-InP based gas sensor
    • DOI 10.1016/j.snb.2004.04.051, PII S0925400504002333, The 17th European Conference on Solid-State Transducers, University of Minho, Guimares, Portugal, September 21-24, 2003
    • 2, CO and high vacuum regeneration of ozone poisoned pseudo-Schottky Pd-InP based gas sensor Sens. Actuators B 103 2004 190 199 (Pubitemid 40329206)
    • (2004) Sensors and Actuators, B: Chemical , vol.103 , Issue.1-2 , pp. 190-199
    • Mazet, L.1    Varenne, C.2    Pauly, A.3    Brunet, J.4    Germain, J.P.5
  • 16
    • 29244476026 scopus 로고    scopus 로고
    • Pd/porous-GaAs Schottky contact for hydrogen sensing application
    • DOI 10.1016/j.snb.2005.03.064, PII S0925400505003321
    • A. Salehi, A. Nikfarjam, and D.J. Kalantari Pd/porous-GaAs Schottky contact for hydrogen sensing application Sens. Actuators B 113 2006 419 427 (Pubitemid 41831315)
    • (2006) Sensors and Actuators, B: Chemical , vol.113 , Issue.1 , pp. 419-427
    • Salehi, A.1    Nikfarjam, A.2    Kalantari, D.J.3
  • 17
    • 3342924319 scopus 로고    scopus 로고
    • Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon-silicon structures
    • V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev, and A.A. Evtukh Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon-silicon structures Appl. Surf. Sci. 234 2004 262 267
    • (2004) Appl. Surf. Sci. , vol.234 , pp. 262-267
    • Litovchenko, V.G.1    Gorbanyuk, T.I.2    Solntsev, V.S.3    Evtukh, A.A.4
  • 18
    • 33847229506 scopus 로고    scopus 로고
    • Characteristics of highly sensitive Au/porous-GaAs Schottky junctions as selective CO and NO gas sensors
    • A. Salehi, and D.J. Kalantari Characteristics of highly sensitive Au/porous-GaAs Schottky junctions as selective CO and NO gas sensors Sens. Actuators B 122 2007 69 74
    • (2007) Sens. Actuators B , vol.122 , pp. 69-74
    • Salehi, A.1    Kalantari, D.J.2
  • 21
    • 4344587672 scopus 로고    scopus 로고
    • Silicon-based materials and devices
    • H.S. Nalwa, Academic Press
    • C. Vinegoni, M. Cazzanelli, and L. Pavesi Silicon-based materials and devices H.S. Nalwa, Properties and Devices vol. 2 2001 Academic Press 123 192
    • (2001) Properties and Devices , vol.2 , pp. 123-192
    • Vinegoni, C.1    Cazzanelli, M.2    Pavesi, L.3
  • 22
    • 49749112872 scopus 로고    scopus 로고
    • Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth
    • H. Hartono, C.B. Soh, S.J. Chua, and E.A. Fitzgerald Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth Phys. Stat. Sol. 4 2007 2572 2575
    • (2007) Phys. Stat. Sol. , vol.4 , pp. 2572-2575
    • Hartono, H.1    Soh, C.B.2    Chua, S.J.3    Fitzgerald, E.A.4
  • 25
    • 58649124302 scopus 로고    scopus 로고
    • Structural and optical characteristics of porous GaN generated by electroless chemical etching
    • F.Y. Yam, and Z. Hassan Structural and optical characteristics of porous GaN generated by electroless chemical etching Mater. Lett. 63 2009 724 727
    • (2009) Mater. Lett. , vol.63 , pp. 724-727
    • Yam, F.Y.1    Hassan, Z.2
  • 26
    • 0016519711 scopus 로고
    • A review of the theory and technology for ohmic contacts to group III-V compound semiconductors
    • V.L. Rideout A review of the theory and technology for ohmic contacts to group III-V compound semiconductors Solid State Electron. 18 1975 541 545
    • (1975) Solid State Electron. , vol.18 , pp. 541-545
    • Rideout, V.L.1
  • 27
    • 36349000299 scopus 로고    scopus 로고
    • Hydrogen sensor based on thin film nanocrystalline n-GaN/Pd Schottky diode
    • DOI 10.1088/0022-3727/40/23/006, PII S0022372707576898
    • S.N. Das, and A.K. Pal1 Hydrogen sensor based on thin film nanocrystalline n-GaN/Pd Schottky diode J. Phys. D: Appl. Phys. 40 2007 7291 7297 (Pubitemid 350146598)
    • (2007) Journal of Physics D: Applied Physics , vol.40 , Issue.23 , pp. 7291-7297
    • Das, S.N.1    Pal, A.K.2
  • 28
    • 79957852596 scopus 로고    scopus 로고
    • Porous GaN on Si (1 1 1) and its application to hydrogen gas sensor
    • A. Ramizy, Z. Hassan, and K. Omar Porous GaN on Si (1 1 1) and its application to hydrogen gas sensor Sens. Actuators B 155 2011 699 708
    • (2011) Sens. Actuators B , vol.155 , pp. 699-708
    • Ramizy, A.1    Hassan, Z.2    Omar, K.3
  • 29
    • 0042924379 scopus 로고    scopus 로고
    • Experimental analysis and theoretical model for anomalously high ideality factors (n 2.0) in AlGaN/GaN p-n junction diodes
    • J.M. Shah, Y.L. Li, T. Gessmann, and E.F. Schubert Experimental analysis and theoretical model for anomalously high ideality factors (n 2.0) in AlGaN/GaN p-n junction diodes J. Appl. Phys. 94 2003 2627 2631
    • (2003) J. Appl. Phys. , vol.94 , pp. 2627-2631
    • Shah, J.M.1    Li, Y.L.2    Gessmann, T.3    Schubert, E.F.4
  • 30
    • 32344438482 scopus 로고    scopus 로고
    • Low-temperature processing and properties of nanocrystalline-SiC/ crystalline Si heterojunction devices
    • DOI 10.1016/j.sse.2005.12.012, PII S0038110106000074
    • H. Colder, R. Rizk, L. Pichon, and O. Bonnaud Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices Solid State Electron. 50 2006 209 213 (Pubitemid 43220414)
    • (2006) Solid-State Electronics , vol.50 , Issue.2 , pp. 209-213
    • Colder, H.1    Rizk, R.2    Pichon, L.3    Bonnaud, O.4
  • 31
    • 28344454640 scopus 로고    scopus 로고
    • Pt-AlGaN/GaN Schottky diodes operated at 800 °c for hydrogen sensing
    • J. Song, W. Lu, J.S. Flynn, and G.R. Brandes Pt-AlGaN/GaN Schottky diodes operated at 800 °C for hydrogen sensing Appl. Phys. Lett. 87 2005 133501 133504
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 133501-133504
    • Song, J.1    Lu, W.2    Flynn, J.S.3    Brandes, G.R.4
  • 32
    • 0032110801 scopus 로고    scopus 로고
    • Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments
    • M. Johansson, I. Lundstrom, and L.G. Ekedahl Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments J. Appl. Phys. 84 1998 44 54
    • (1998) J. Appl. Phys. , vol.84 , pp. 44-54
    • Johansson, M.1    Lundstrom, I.2    Ekedahl, L.G.3


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