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Volumn 50, Issue 2, 2006, Pages 209-213

Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices

Author keywords

Heterojunction; Nanocrystalline SiC

Indexed keywords

ANNEALING; DIFFUSION; DIODES; HETEROJUNCTIONS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SILICON;

EID: 32344438482     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.012     Document Type: Article
Times cited : (10)

References (20)
  • 1
    • 32344444223 scopus 로고    scopus 로고
    • edited by Mater. Sci. Forum, Trans Tech Publication, Switzerland
    • Madar J, Camassel E. Blanquet, in: Silicon carbide and related materials, edited by Mater. Sci. Forum, Trans Tech Publication, Switzerland, 2004. p. 457.
    • (2004) Silicon Carbide and Related Materials , pp. 457
    • Madar, J.1    Blanquet, C.E.2
  • 2
    • 30344471753 scopus 로고    scopus 로고
    • edited by Springer series in: Materials Science, Springer
    • Feng ZC, SiC power materials and devices, edited by Springer series in: Materials Science, Springer, 2004, vol. 73.
    • (2004) SiC Power Materials and Devices , vol.73
    • Feng, Z.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.