Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi 2Ti 2O 7) films

Materials Research Bulletin

Volumn 47, Issue 3, 2012, Pages 511-517

  Hardy, A ^a,b,e   Van Elshocht, S ^b   De Dobbelaere, C ^a   Hadermann, J ^c   Pourtois, G ^b   De Gendt, S ^b,d   Afanas'Ev, V V ^d   Van Bael, M K ^a,b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e HASSELT UNIVERSITY   (Belgium)

Author keywords

A. Oxides; A. Thin films; B. Sol gel chemistry; D. Dielectric properties

Indexed keywords

AQUEOUS CHEMICAL SOLUTION DEPOSITION; B. SOL-GEL CHEMISTRY; BISMUTH TITANATE; BISMUTH TITANATE FILMS; CAPACITANCE VOLTAGE MEASUREMENTS; HIGH DIELECTRIC CONSTANTS; INTERFACIAL-LAYER THICKNESS; PROCESSING CONDITION; PYROCHLORE PHASE; SOLUTION-PROCESSED; TEM-EDX; THERMAL BUDGET; ULTRA-THIN;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; SILICON COMPOUNDS; SOL-GELS; SUBSTRATES; SURFACE ROUGHNESS;

BISMUTH;

EID: 84857506552     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.01.001     Document Type: Article

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