Leakage current behavior of La-doped Bi2Ti2O 7 thin films by a chemical solution deposition method

Materials Letters

Volumn 58, Issue 29, 2004, Pages 3725-3728

  Yang, Xuena ^a   Huang, Baibiao ^a   Wang, Hongbin ^b   Shang, Shuxia ^a   Yao, Weifeng ^a   Wei, Jiyong ^a  

^a SHANDONG UNIVERSITY   (China)

^b QILU UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Leakage current density; Thin film; X ray diffraction

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CURRENT DENSITY; DIELECTRIC RELAXATION; INSULATING MATERIALS; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SOLUTIONS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LEAKAGE CURRENT DENSITY; RESIDUAL ORGANICS; ROOM TEMPERATURE; TEMPERATURE STABILITY;

BISMUTH COMPOUNDS;

EID: 4944244568     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.08.003     Document Type: Article

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