Bias dependence of spin-polarized tunnel current through Fe/GaAs and Fe/GaAs/Fe junctions

Journal of Physics D: Applied Physics

Volumn 43, Issue 13, 2010, Pages

  Honda, S ^a   Itoh, H ^b   Inoue, J ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS DEPENDENCE; FINITE BIAS; GAAS; HIGH SPIN POLARIZATION; LINEAR-RESPONSE THEORY; RESONANT STATE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SPIN-POLARIZED; TIGHT BINDING MODEL; TUNNEL CURRENTS;

BIAS VOLTAGE; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SPIN DYNAMICS; SPIN POLARIZATION; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 77949677730     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/13/135002     Document Type: Article

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