Spin injection studies into GaAs quantum wells in the presence of confined electrons

Applied Physics Letters

Volumn 94, Issue 3, 2009, Pages

  Yasar, M ^a   Mallory, R ^a   Petrou, A ^a   Hanbicki, A T ^b   Kioseoglou, G ^b,c   Li, C H ^b   Van'T Erve, O M J ^b   Jonker, B T ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; GALLIUM ALLOYS; LIGHT; LIGHT EMISSION; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS;

ALGAAS/GAAS; ELECTROLUMINESCENCE SPECTRUM; GAAS; GAAS QUANTUM WELLS; N-TYPE DOPING; PHONON REPLICAS; POLARIZATION CHARACTERISTICS; SPECTRAL COMPOSITIONS; SPIN INJECTIONS; SPIN LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 58849120565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073752     Document Type: Article

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