Evidence of electrical spin injection into silicon using MgO tunnel barrier

IEEE Transactions on Magnetics

Volumn 46, Issue 6, 2010, Pages 1436-1439

  Sasaki, Tomoyuki ^a   Oikawa, Tohru ^a   Suzuki, Toshio ^b   Shiraishi, Masashi ^c   Suzuki, Yoshishige ^c   Noguchi, Kiyoshi ^a  

^a TDK CORPORATION   (Japan)

^b Akita Research Institute of Advanced Technology   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Electrical spin detection; Electrical spin injection; MgO tunnel burrier; Silicon spintronics

Indexed keywords

MAGNESIA; OXIDE MINERALS; SILICON;

ELECTRICAL SPIN INJECTION; SPIN CURRENTS; SPIN DETECTION; SPIN INJECTION; SPIN LIFETIMES; SPIN PRECESSION; SPIN-DIFFUSION LENGTH; TUNNEL BARRIER;

TUNNELLING MAGNETORESISTANCE;

EID: 77952831162     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2045347     Document Type: Article

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