Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co 50Fe50/n-GaAs junctions

Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

  Uemura, Tetsuya ^a   Harada, Masanobu ^a   Akiho, Takafumi ^a   Matsuda, Ken Ichi ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS SURFACES; STRUCTURAL ANISOTROPY; TUNNELING ANISOTROPIC MAGNETORESISTANCES;

ELECTRIC RESISTANCE; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOCRYSTALLINE ANISOTROPY; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM;

SURFACE STRUCTURE;

EID: 79952661819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561759     Document Type: Article

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