Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429-467 nm

Current Applied Physics

Volumn 12, Issue 3, 2012, Pages 885-889

  Jung, Eunjin ^a   Kim, Seongjun ^a   Kim, Hyunsoo ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Efficiency droop; Electroluminescence; Indium composition fluctuation; Light emitting diode

Indexed keywords

ACTIVE REGIONS; DEVICE RESISTANCE; EMISSION WAVELENGTH; GAN-BASED LIGHT-EMITTING DIODES; HETERO-INTERFACES; INDIUM COMPOSITION FLUCTUATION; INDIUM CONTENT; INDIUM-COMPOSITION FLUCTUATIONS; OPTICAL CHARACTERISTICS; OPTICAL OUTPUT; QUANTUM CONFINEMENT EFFECTS; SPECTRAL BLUESHIFT; SPECTRAL BROADENING;

DIODES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; OPTICAL MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84857458283     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.12.002     Document Type: Article

References (28)

1. E. Fred Schubert Light-Emitting Diodes second ed. 2006 Cambridge University Press Cambridge
2. R.D. Dupuis, and M.R. Krames History, development, and applications of high-brightness visible light-emitting diodes J. Lightw. Technol. 26 9 May 2008 1154 1171
3. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Appl. Phys. Lett. 70 8 Feb. 1997 981 983 (Pubitemid 127638768)
4. S. Nakamura The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes Science 281 5379 Aug. 1998 956 961 (Pubitemid 28399238)
5. D. Doppalapudi, S.N. Basu, K.F. Ludwig Jr., and T.D. Moustakas Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy J. Appl. Phys. 84 3 Aug. 1998 1389 1395 (Pubitemid 128588788)
6. Y.-S. Lin, K.-J. Ma, C. Hsu, S.-W. Feng, Y.-C. Cheng, C.-C. Liao, C.C. Yang, C.-C. Chou, C.-M. Lee, and J.-I. Chyi Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Appl. Phys. Lett. 77 19 Sep. 2000 2988 2990
7. 1-yN quaternary alloys Appl. Phys. Lett. 80 8 Feb. 2002 1397 1399
8. S.M. de Sousa Pereira, K.P. O'Donnell, and E.J. da Costa Alves Role of nanoscale strain inhomogeneity on the light emission from InGaN epilayers Adv. Funct. Mater. 17 1 Jan. 2007 37 42 (Pubitemid 46145111)
9. X.A. Cao, and Y. Yang Electroluminescence observation of nanoscale phase separation in quaternary AlInGaN light-emitting diodes Appl. Phys. Lett. 96 15 Apr. 2010 151109-1 151109-3
10. J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization Appl. Phys. Lett. 97 20 Nov. 2010 201112-1 201112-3
11. D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, and C.A. Burrus Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect Phys. Rev. Lett. 53 22 Nov. 1984 2173 2176
12. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, and I. Akasaki Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect Appl. Phys. Lett. 73 12 Sep. 1998 1691 1693 (Pubitemid 128671954)
13. J. Zhang, J. Yang, G. Simin, M. Shatalov, M.S. Khan, M.S. Shur, and R. Gaska Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers Appl. Phys. Lett. 77 17 Oct. 2000 2668 2670
14. K.A. Bulashevich, S.Y. Karpov, and R.A. Suris Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers Phys. Status Solidi B 243 7 June 2006 1625 1629 (Pubitemid 44013974)
15. J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J.P. Liu, R.D. Dupuis, Z.H. Wu, A.M. Fischer, and F.A. Ponce Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes Appl. Phys. Lett. 92 10 Mar. 2008 101113-1 101113-3
16. J.-H. Ryou, P.D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H.J. Kim, and R.D. Dupuis Control of quantum-confined Stark effect in InGaN-based quantum wells IEEE J. Select. Top. Quantum Electron. 15 4 July/Aug. 2009 1080 1091
17. A. David, and M.J. Grundmann Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes Appl. Phys. Lett. 97 July 2010 033501-1 033501-3
18. S.W. Lee, D.C. Oh, H. Goto, J.S. Ha, H.J. Lee, T. Hanada, M.W. Cho, T. Yao, S.K. Hong, H.Y. Lee, S.R. Cho, J.W. Choi, J.H. Choi, J.H. Hang, J.E. Shin, and J.S. Lee Origin of forward leakage current in GaN-based light-emitting devices Appl. Phys. Lett. 89 13 Sep. 2006 132117-1 132117-3
19. K.P. O'Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P.G. Middleton Optical linewidths of InGaN light emitting diodes and epilayers Appl. Phys. Lett. 70 14 Apr. 1997 1843 1845 (Pubitemid 127637164)
20. H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, and H. Makano Effects of nonradiative centers on localized excitons in InGaN quantum well structures Appl. Phys. Lett. 89 22 Nov. 2006 222110-1 222110-3
21. Q. Dai, M.F. Schubert, M.H. Kim, J.K. Kim, E.F. Schubert, D.D. Koleske, M.H. Crawford, S.R. Lee, A.J. Fischer, G. Thaler, and M.A. Banas Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Appl. Phys. Lett. 94 11 Mar. 2009 111109-1 111109-3
22. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, H. Amano, S.J. Pearton, I.-H. Lee, Q. Sun, J. Han, and S.Yu. Karpov Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Appl. Phys. Lett. 98 7 Feb. 2011 072104-1 072104-3
23. 1-xN alloys Appl. Phys. Lett. 72 21 May 1998 2725 2727
24. 1-xN Phys. Status Solidi 195 3 Feb. 2003 628 633
25. I. Gorczyca, T. Suski, N.E. Christensen, and A. Svane Limitations to band gap tuning in nitride semiconductor alloys Appl. Phys. Lett. 96 10 Mar 2010 101907-1 101907-3
26. SiLENSe Physics Summary. http://www.semitech.us/products/SiLENSe/.
27. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai Phosphor-converted white light emitting diode using InGaN near-ultraviolet chip Jpn. J. Appl. Phys. 41 4A Apr. 2002 L371 L373
28. J. Cho, E. Yoon, Y. Park, W.J. Ha, and J.K. Kim Characteristics of blue and ultraviolet light-emitting diodes with current density and temperature Electron. Mater. Lett. 6 2 June 2010 51 53