메뉴 건너뛰기




Volumn 521, Issue , 2012, Pages 155-162

Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

Author keywords

Oxide materials; Sol gel process; Thin films; X ray diffraction

Indexed keywords

AL DOPED; AL-CONCENTRATION; AL-DOPING; ALUMINUM-DOPED ZNO; AMBIENT CONDITIONS; AZO FILMS; AZO THIN FILMS; BAND GAP ENERGY; DEPOSITED FILMS; DOPED ZNO; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONDUCTANCE; FLUORINE DOPED TIN OXIDE; GLASS SUBSTRATES; HETEROGENEOUS INTEGRATION; HETEROJUNCTION DEVICES; IDEALITY FACTORS; MULTIFUNCTIONAL DEVICES; OPTICAL CHARACTERISTICS; OPTICAL CHARACTERIZATION; OPTICAL TRANSPARENCY; ORDERS OF MAGNITUDE; OXIDE MATERIALS; PIEZORESISTIVITY; POST ANNEALING; RECTIFICATION RATIO; SODA LIME GLASS; SOL-GEL DEPOSITION; SUBSTRATE MATERIAL; TUNABLE BAND-GAP; WIDE BAND GAP; ZNO;

EID: 84857453344     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.01.103     Document Type: Article
Times cited : (72)

References (49)
  • 32
    • 84857449230 scopus 로고    scopus 로고
    • JCPDS (Joint Committee on Powder Diffraction Standards) Card No.: 89-7102.
    • JCPDS (Joint Committee on Powder Diffraction Standards) Card No.: 89-7102.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.