Preparation of transparent conducting Al-doped ZnO thin films by single source chemical vapor deposition

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 11, 2010, Pages 1651-1654

  Zhang, W Y ^a,b   He, D K ^b   Liu, Z Z ^a   Sun, L J ^b   Fu, Z X ^b  

^a LUOYANG NORMAL COLLEGE   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

AZO; Chemical vapor deposition; Thin film

Indexed keywords

ALUMINUM OXIDE; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; OPTICAL FILMS; OXIDE FILMS; OXIDE MINERALS; SEMICONDUCTOR DOPING; ZINC OXIDE;

ABSORPTION EDGES; AL DOPED ZNO THIN FILMS; AL-DOPED ZINC OXIDE; ANNEALING TEMPERATURES; HALL MEASUREMENTS; OPTICAL AND ELECTRICAL PROPERTIES; QUARTZ SUBSTRATE; SINGLE SOURCE CHEMICAL VAPOR DEPOSITION;

THIN FILMS;

EID: 79551640971     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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