SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

(5) Marqués, Luis A a Pelaz, Lourdes a Santos, Ivn a López, Pedro a Duffy, Ray b

a UNIVERSITY OF VALLADOLID (Spain)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS REGIONS; FREE SURFACES; LATERAL SURFACE; MOLECULAR DYNAMICS SIMULATIONS; NANOMETRICS; SI DEVICES;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; FINS (HEAT EXCHANGE); FORCED CONVECTION; MOLECULAR DYNAMICS; NANOWIRES; RECRYSTALLIZATION (METALLURGY); SILICON;

INTERFACES (MATERIALS);

EID: 84857409005 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3679126 Document Type: Article

Times cited : (10)

References (33)

1
- 0032069546
- 10.1007/s003390050709
- J. L. Liu, Y. Lu, Y. Shi, S. L. Gu, R. L. Jiang, F. Wang, and Y. D. Zheng, Appl. Phys. A 66, 539 (1998). 10.1007/s003390050709
- (1998) Appl. Phys. A , vol.66 , pp. 539
- Liu, J.L.¹ Lu, Y.² Shi, Y.³ Gu, S.L.⁴ Jiang, R.L.⁵ Wang, F.⁶ Zheng, Y.D.⁷

2
- 0038161696
- 10.1021/nl025875l
- Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (1982). 10.1021/nl025875l
- (1982) Nano Lett. , vol.3 , pp. 149
- Cui, Y.¹ Zhong, Z.² Wang, D.³ Wang, W.U.⁴ Lieber, C.M.⁵

3
- 84857398349
- International Technology Roadmafor Semiconductors
- See http://www.itrs.net/for International Technology Roadmap for Semiconductors.

4
- 78649320952
- 10.1016/j.mser.2010.07.002
- C. Ronning, C. Borschel, S. Geburt, and R. Niepelt, Mater. Sci. Eng. R. 70, 30 (2010). 10.1016/j.mser.2010.07.002
- (2010) Mater. Sci. Eng. R. , vol.70 , pp. 30
- Ronning, C.¹ Borschel, C.² Geburt, S.³ Niepelt, R.⁴

5
- 33749350786
- Atomistic modeling of dopant implantation, diffusion, and activation
- DOI 10.1116/1.2348726
- L. Pelaz, M. Aboy, P. López, and L. A. Marqués, J. Vac. Sci. Technol. B 24, 2432 (2006). 10.1116/1.2348726 (Pubitemid 44496235)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.5 , pp. 2432-2436
- Pelaz, L.¹ Aboy, M.² Lopez, P.³ Marques, L.A.⁴

6
- 56949090685
- 10.1016/j.mseb.2008.08.018
- P. F. Fazzini, F. Cristiano, C. Dupr, S. Paul, T. Ernst, H. Kheyrandish, K. K. Bourdelle, and W. Lerch, Mater. Sci. Eng. B 154-155, 256 (2008). 10.1016/j.mseb.2008.08.018
- (2008) Mater. Sci. Eng. B , vol.154-155 , pp. 256
- Fazzini, P.F.¹ Cristiano, F.² Dupr, C.³ Paul, S.⁴ Ernst, T.⁵ Kheyrandish, H.⁶ Bourdelle, K.K.⁷ Lerch, W.⁸

7
- 70349651759
- 10.1063/1.3211972
- E. Lampin and C. Krzeminski, J. Appl. Phys. 106, 063519 (2009). 10.1063/1.3211972
- (2009) J. Appl. Phys. , vol.106 , pp. 063519
- Lampin, E.¹ Krzeminski, C.²

8
- 33847741771
- A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- DOI 10.1063/1.2426924
- K. L. Saenger, J. P. de Souza, K. E. Fogel, J. A. Ott, C. Y. Sung, D. K. Sadana, and H. Yin, J. Appl. Phys. 101, 024908 (2007). 10.1063/1.2426924 (Pubitemid 46372880)
- (2007) Journal of Applied Physics , vol.101 , Issue.2 , pp. 024908
- Saenger, K.L.¹ De Souza, J.P.² Fogel, K.E.³ Ott, J.A.⁴ Sung, C.Y.⁵ Sadana, D.K.⁶ Yin, H.⁷

9
- 34250671643
- Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors
- DOI 10.1063/1.2749186
- R. Duffy, M. van Dal, B. Pawlak, M. Kaiser, R. Weemaes, B. Degroote, E. Lunnen, and E. Al-tamirano, Appl. Phys. Lett. 90, 241912 (2007). 10.1063/1.2749186 (Pubitemid 46934763)
- (2007) Applied Physics Letters , vol.90 , Issue.24 , pp. 241912
- Duffy, R.¹ Van Dal, M.J.H.² Pawlak, B.J.³ Kaiser, M.⁴ Weemaes, R.G.R.⁵ Degroote, B.⁶ Kunnen, E.⁷ Altamirano, E.⁸

10
- 67349175308
- 10.1016/j.sse.2009.03.017
- I. Ferain, R. Duffy, N. Collaert, M. J. H. van Dal, B. J. Pawlak, B. O'Sullivan, L. Witters, R. Rooyackers, T. Conard, M. Popovici, S. van Elshocht, M. Kaiser, R. G. R. Weemaes, J. Swerts, M. Jurczak, R. J. P. Lander, and K. De Meyer, Solid-State Electron. 53, 760 (2009). 10.1016/j.sse.2009.03.017
- (2009) Solid-State Electron. , vol.53 , pp. 760
- Ferain, I.¹ Duffy, R.² Collaert, N.³ Van Dal, M.J.H.⁴ Pawlak, B.J.⁵ O'Sullivan, B.⁶ Witters, L.⁷ Rooyackers, R.⁸ Conard, T.⁹ Popovici, M.¹⁰ Van Elshocht, S.¹¹ Kaiser, M.¹² Weemaes, R.G.R.¹³ Swerts, J.¹⁴ Jurczak, M.¹⁵ Lander, R.J.P.¹⁶ De Meyer, K.¹⁷

11
- 0009716113
- 10.1063/1.94217
- H. Ishiwara, H. Yamamoto, S. Furukawa, M. Tamura, and T. Tokuyama, Appl. Phys. Lett. 43, 1028 (1983). 10.1063/1.94217
- (1983) Appl. Phys. Lett. , vol.43 , pp. 1028
- Ishiwara, H.¹ Yamamoto, H.² Furukawa, S.³ Tamura, M.⁴ Tokuyama, T.⁵

12
- 0021463322
- 2 boundary
- DOI 10.1063/1.333958
- Y. Kunni, T. Michibaru, and K. Kajiyama, J. Appl. Phys. 56, 279 (1984). 10.1063/1.333958 (Pubitemid 14626809)
- (1984) Journal of Applied Physics , vol.56 , Issue.2 , pp. 279-285
- Kunii, Y.¹ Tabe, M.² Kajiyama, K.³

13
- 38649140309
- M. van Dal, N. Collaert, G. Doornbos, G. Vellianitis, G. Curatola, B. Pawlak, R. Duffy, C. Jonville, B. Degroote, E. Altamirano, E. Kunnen, M. Demand, S. Beckx, T. Vandeweyer, C. Delvaux, F. Leys, A. Hikavyy, R. Rooyackers, M. Kaiser, R. G. R. Weemaes, S. Biesemans, M. Jurczak, K. Anil, L. Witters, and R. J. P. Lander, in Dig. Tech. Pap. - Symp. VLSI Technol. 2007, 110.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2007 , pp. 110
- Van Dal, M.¹ Collaert, N.² Doornbos, G.³ Vellianitis, G.⁴ Curatola, G.⁵ Pawlak, B.⁶ Duffy, R.⁷ Jonville, C.⁸ Degroote, B.⁹ Altamirano, E.¹⁰ Kunnen, E.¹¹ Demand, M.¹² Beckx, S.¹³ Vandeweyer, T.¹⁴ Delvaux, C.¹⁵ Leys, F.¹⁶ Hikavyy, A.¹⁷ Rooyackers, R.¹⁸ Kaiser, M.¹⁹ Weemaes, R.G.R.²⁰ more..

14
- 70350633029
- T. Merelle, G. Curatola, G. Nackaerts, A. Collaert, M. J. H. van Dal, G. Doornbos, T. S. Doorn, P. Christie, G. Vellianitis, B. Duriez, R. Duffy, B. J. Pawlak, F. C. Voogt, R. Rooyackers, L. Witters, M. Jurczak, and R. J. P. Lander, in Tech. Dig.-Int. Electron Devices Meet. 2008, 241.
- (2008) Tech. Dig. - Int. Electron Devices Meet , pp. 241
- Merelle, T.¹ Curatola, G.² Nackaerts, G.³ Collaert, A.⁴ Van Dal, M.J.H.⁵ Doornbos, G.⁶ Doorn, T.S.⁷ Christie, P.⁸ Vellianitis, G.⁹ Duriez, B.¹⁰ Duffy, R.¹¹ Pawlak, B.J.¹² Voogt, F.C.¹³ Rooyackers, R.¹⁴ Witters, L.¹⁵ Jurczak, M.¹⁶ Lander, R.J.P.¹⁷

15
- 79251589685
- L. Pelaz, R. Duffy, M. Aboy, L. A. Marqués, P. López, I. Santos, B. J. Pawlak, M. J. H. van Dal, B. Duriez, T. Merelle, G. Doornbos, N. Collaert, L. Witters, R. Rooyackers, W. Vandervorst, M. Jurczak, M. Kaiser, R. G. R. Weemaes, J. G. M. van Berkum, P. Breimer, and R. J. P. Lander, Tech. Dig.-Int. Electron Devices Meet. 2008, 535.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 535
- Pelaz, L.¹ Duffy, R.² Aboy, M.³ Marqués, L.A.⁴ López, P.⁵ Santos, I.⁶ Pawlak, B.J.⁷ Van Dal, M.J.H.⁸ Duriez, B.⁹ Merelle, T.¹⁰ Doornbos, G.¹¹ Collaert, N.¹² Witters, L.¹³ Rooyackers, R.¹⁴ Vandervorst, W.¹⁵ Jurczak, M.¹⁶ Kaiser, M.¹⁷ Weemaes, R.G.R.¹⁸ Van Berkum, J.G.M.¹⁹ Breimer, P.²⁰ Lander, R.J.P.²¹ more..

16
- 79960176942
- 10.1063/1.3596815
- E. Lampin and C. Krzeminski, J. Appl. Phys. 109, 123509 (2011). 10.1063/1.3596815
- (2011) J. Appl. Phys. , vol.109 , pp. 123509
- Lampin, E.¹ Krzeminski, C.²

17
- 79959343652
- 10.1063/1.3596466
- I. Martn-Bragado, Appl. Phys. Lett. 98, 233109 (2011). 10.1063/1.3596466
- (2011) Appl. Phys. Lett. , vol.98 , pp. 233109
- Martn-Bragado, I.¹

18
- 0003576136
- (Wiley, New York)
- J. M. Haile, Molecular Dynamics Simulations: Elementary Methods (Wiley, New York, 1992).
- (1992) Molecular Dynamics Simulations: Elementary Methods
- Haile, J.M.¹

19
- 27744577658
- 10.1103/PhysRevB.39.5566
- J. Tersoff, Phys. Rev. B 39, 5566 (1989). 10.1103/PhysRevB.39.5566
- (1989) Phys. Rev. B , vol.39 , pp. 5566
- Tersoff, J.¹

20
- 0007976751
- 10.1103/PhysRevB.56.15133
- M. Ishimaru, S. Munetoh, and T. Motooka, Phys. Rev. B 56, 15133 (1997). 10.1103/PhysRevB.56.15133
- (1997) Phys. Rev. B , vol.56 , pp. 15133
- Ishimaru, M.¹ Munetoh, S.² Motooka, T.³

21
- 1042277346
- 10.1016/j.nimb.2003.11.020
- L. A. Marqués, L. Pelaz, M. Aboy, and J. Barbolla, Nucl. Instrum. Methods Phys. Res. B 216, 57 (2004). 10.1016/j.nimb.2003.11.020
- (2004) Nucl. Instrum. Methods Phys. Res. B , vol.216 , pp. 57
- Marqués, L.A.¹ Pelaz, L.² Aboy, M.³ Barbolla, J.⁴

22
- 0035878366
- 10.1103/PhysRevB.64.045214
- L. A. Marqués, L. Pelaz, J. Hernndez, J. Barbolla, and G. H. Gilmer, Phys. Rev. B 64, 45214 (2001). 10.1103/PhysRevB.64.045214
- (2001) Phys. Rev. B , vol.64 , pp. 45214
- Marqués, L.A.¹ Pelaz, L.² Hernndez, J.³ Barbolla, J.⁴ Gilmer, G.H.⁵

23
- 0003747217
- (MacMillan, New York)
- J. W. Mayer and S. S. Lau, Electronics Materials Science for Integrated Circuits in Si and GaAs (MacMillan, New York, 1990).
- (1990) Electronics Materials Science for Integrated Circuits in Si and GaAs
- Mayer, J.W.¹ Lau, S.S.²

24
- 0002531253
- 10.1063/1.364102
- L. J. Porter, S. Yip, M. Yamaguchi, H. Kaburaki, and M. Tang, J. Appl. Phys. 81, 96 (1997). 10.1063/1.364102
- (1997) J. Appl. Phys. , vol.81 , pp. 96
- Porter, L.J.¹ Yip, S.² Yamaguchi, M.³ Kaburaki, H.⁴ Tang, M.⁵

25
- 0001051163
- 10.1103/PhysRevB.55.14279
- M. Tang, L. Colombo, J. Zhu, and T. D. de la Rubia, Phys. Rev. B 55, 14279 (1997). 10.1103/PhysRevB.55.14279
- (1997) Phys. Rev. B , vol.55 , pp. 14279
- Tang, M.¹ Colombo, L.² Zhu, J.³ De La Rubia, T.D.⁴

26
- 0000671373
- 10.1103/PhysRevB.57.170
- F. Cargnoni, C. Gatti, and L. Colombo, Phys. Rev. B 57, 170 (1998). 10.1103/PhysRevB.57.170
- (1998) Phys. Rev. B , vol.57 , pp. 170
- Cargnoni, F.¹ Gatti, C.² Colombo, L.³

27
- 0242352693
- 10.1103/PhysRevLett.91.135504
- L. A. Marqués, L. Pelaz, M. Aboy, L. Enrquez, and J. Barbolla, Phys. Rev. Lett. 91, 135504 (2003). 10.1103/PhysRevLett.91.135504
- (2003) Phys. Rev. Lett. , vol.91 , pp. 135504
- Marqués, L.A.¹ Pelaz, L.² Aboy, M.³ Enrquez, L.⁴ Barbolla, J.⁵

28
- 31144467954
- 10.1103/PhysRevLett.54.1392
- F. Wooten, K. Winer, and D. Weaire, Phys. Rev. Lett. 54, 1392 (1985). 10.1103/PhysRevLett.54.1392
- (1985) Phys. Rev. Lett. , vol.54 , pp. 1392
- Wooten, F.¹ Winer, K.² Weaire, D.³

29
- 19144366632
- Ion-beam-induced amorphization and recrystallization in silicon
- DOI 10.1063/1.1808484
- L. Pelaz, L. A. Marqués, and J. Barbolla, J. Appl. Phys. 96, 5947 (2004). 10.1063/1.1808484 (Pubitemid 40715230)
- (2004) Journal of Applied Physics , vol.96 , Issue.11 , pp. 5947-5976
- Pelaz, L.¹ Marqus, L.A.² Barbolla, J.³

30
- 84857390872
- Ph.D. thesis, Univ. de Valladolid, Spain
- I. Santos, Ph.D. thesis, Univ. de Valladolid, Spain, 2010.
- (2010)
- Santos, I.¹

31
- 0001843172
- 10.1063/1.88980
- L. Csepregi, J. W. Mayer, and T. W. Sigmon, Appl. Phys. Lett. 29, 92 (1976). 10.1063/1.88980
- (1976) Appl. Phys. Lett. , vol.29 , pp. 92
- Csepregi, L.¹ Mayer, J.W.² Sigmon, T.W.³

32
- 0019923642
- Some observations on the amorphous to crystalline transformation in silicon
- DOI 10.1063/1.329901
- B. Drosd and J. Washburn, J. Appl. Phys. 53, 397 (1982). 10.1063/1.329901 (Pubitemid 12467619)
- (1982) Journal of Applied Physics , vol.53 , Issue.1 , pp. 397-403
- Drosd, R.¹ Washburn, J.²

33
- 0040957890
- 10.1063/1.445731
- K. F. Kelton, A. L. Greer, and C. V. Thompson, J. Chem. Phys. 79, 6261 (1983). 10.1063/1.445731
- (1983) J. Chem. Phys. , vol.79 , pp. 6261
- Kelton, K.F.¹ Greer, A.L.² Thompson, C.V.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.