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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

(2) Lampin, E a Krzeminski, C a

a INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BI-LAYER; CRYSTALLINE SILICONS; GROWTH MECHANISMS; INTERATOMIC POTENTIAL; MOLECULAR DYNAMICS SIMULATIONS; ORIENTATION EFFECT; PLANAR INTERFACE; SOLID PHASE EPITAXY;

CRYSTAL GROWTH; CRYSTALLIZATION; MOLECULAR DYNAMICS; MOLECULAR ORIENTATION; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 70349651759 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211972 Document Type: Article

Times cited : (30)

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