{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

Applied Physics Letters

Volumn 98, Issue 23, 2011, Pages

  Martin Bragado, Ignacio ^a  

^a IMDEA MATERIALS INSTITUTE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT GENERATION; LATTICE KINETICS; LOCAL CONFIGURATIONS; MODEL ACCURACY; RANDOM NUCLEATION; SI SUBSTRATES; SOLID PHASE EPITAXIAL REGROWTH;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; DEFECTS; EPITAXIAL GROWTH; MONTE CARLO METHODS; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959343652     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596466     Document Type: Article

References (12)

1. L. Pelaz, L. A. Marques, and J. Barbolla, J. Appl. Phys. 0021-8979 96, 5947 (2004). 10.1063/1.1808484 (Pubitemid 40715230)
2. M. Jaraiz, Predictive Simulation of Semiconductor Processing (Springer, Berlin, 2004), pp. 73-109.
3. N. Zographos and I. Martin-Bragado, Doping Engineering for Front-End Processing, MRS Symposia Proceedings Vol. 1070 (Materials Research Society, Pittsburgh, 2008).
4. I. Martin-Bragado and V. Moroz, Appl. Phys. Lett. 0003-6951 95, 123123 (2009). 10.1063/1.3236535
5. I. Martin-Bragado, " Importance of {111} induced defects on Solid Phase Epitaxial Growth: A lattice kinetic Monte Carlo study. " (to be submitted).
6. N. Burbure, N. G. Rudawski, and K. S. Jones, Electrochem. Solid-State lett. 10, H184 (2007). 10.1149/1.2719597 (Pubitemid 46550205)
7. K. L. Saenger, J. de Souze, K. E. Fogel, J. A. Ott, Y. Sung, D. K. Sadana, and H. Yin, J. Appl. Phys. 0021-8979 101, 024908 (2007). 10.1063/1.2426924 (Pubitemid 46372880)
8. K. L. Saenger, K. E. Fogel, J. A. Ott, D. K. Sadana, and H. Yin, J. Appl. Phys. 0021-8979 101, 104908 (2007). 10.1063/1.2736343 (Pubitemid 46872070)
9. K. L. Saenger, J. de Souza, K. Fogel, J. Ott, A. Reznicek, C. Sung, H. Yin, and D. Sadana, Transistor Scaling-Methods, Materials and Modeling, MRS Symposia Proceedings (Materials Research Society, Pittsburgh, 2006), p. 0913.
10. R. Duffy, M. V. Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, B. Degroote, E. Kunnen, and E. Altamirano, Appl. Phys. Lett. 0003-6951 90, 241912 (2007). 10.1063/1.2749186 (Pubitemid 46934763)
11. L. Csepregi, J. W. Mayer, and T. W. Sigmon, Appl. Phys. Lett. 0003-6951 29, 92 (1976). 10.1063/1.88980
12. R. Drosd and J. Washburn, J. Appl. Phys. 0021-8979 53, 397 (1982). 10.1063/1.329901 (Pubitemid 12467619)