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Volumn 504, Issue 1-2, 2006, Pages 284-287

Effect of grain growth stress and stress gradient on stress-induced voiding in damascene Cu/low-k interconnects for ULSI

Author keywords

Damascene Cu low k; Finite element analysis; Hydrostatic stress; X ray diffraction

Indexed keywords

ANNEALING; FINITE ELEMENT METHOD; INTERCONNECTION NETWORKS; STRESSES; THERMAL EXPANSION; X RAY DIFFRACTION;

EID: 33644891008     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.013     Document Type: Conference Paper
Times cited : (8)

References (24)
  • 9
    • 12844249999 scopus 로고    scopus 로고
    • Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004
    • R.J. Carter C.S. Hau-Riege G.M. Kloster T.-M. Lu S.E. Schulz Materials Research Society Warrendale, Pennsylvania
    • W.C. Baek, P.S. Ho, J.G. Lee, S.B. Hwang, K.K. Choi, and J.S. Maeng R.J. Carter C.S. Hau-Riege G.M. Kloster T.-M. Lu S.E. Schulz Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 Mater. Res. Soc. Symp. Proc. vol. 812 2004 Materials Research Society Warrendale, Pennsylvania F7.8
    • (2004) Mater. Res. Soc. Symp. Proc. , vol.812
    • Baek, W.C.1    Ho, P.S.2    Lee, J.G.3    Hwang, S.B.4    Choi, K.K.5    Maeng, J.S.6
  • 18
    • 85087234596 scopus 로고    scopus 로고
    • Low Dielectric Constant Materials III
    • P.H. Townsend Low Dielectric Constant Materials III MRS Symposium Proceedings vol. 476 1997 9
    • (1997) MRS Symposium Proceedings , vol.476 , pp. 9
    • Townsend, P.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.