Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 12, 2011, Pages 10824-10828

  Chang, Geng Rong ^a   Ma, Fei ^a   Ma, Dayan ^a   Xu, Kewei ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

HRTEM; Raman shift; Silicon carbide films; Silicon quantum dots

Indexed keywords

ANNEALING TEMPERATURES; ATOM RATIO; FIRST ORDER; GLANCING ANGLE X-RAY DIFFRACTIONS; HIGH-DENSITY; HRTEM; LOWER FREQUENCIES; MAGNETRON CO-SPUTTERING; RAMAN SHIFT; SILICON CARBIDE FILMS; SILICON QUANTUM DOTS; THERMAL CRYSTALLIZATION;

AMORPHOUS FILMS; ANNEALING; MAGNETRONS; PHASE SEPARATION; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 84857159847     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4025     Document Type: Conference Paper

References (28)

1. A. G. Cullis and L. T. Canham, Nature 353, 335 (1991).
2. W. L. Wilson, P. F. Szajowski, and L. E. Brus, Science 262, 1242 (1993).
3. G. V. Prakash, N. Daldossa, E. Degoli, F. Iacona, M. Cazzanelli, Z. Gaburro, G. Pucker, P. Dalba, F. Rocca, E. C. Moreira, G. Franzo, D. Pacifici, F. Priolo, C. Arcangeli, A. B. Filonov, S. Ossicini, and L. Pavesi, J. Nanosci. Nanotechnol. 1, 159 (2001).
4. S. M. Kang, S. G. Yoon, S.-W. Kim, and D. H. Yoon, J. Nanosci. Nanotechnol. 8, 2540 (2008).
5. Z. H. Lu, D. J. Lockwood, and J. M. Baribeau, Nature 378, 258 (1995).
6. A. G. Nassiopoulos, S. Grigoropoulos, and D. Papadimitriou, Appl. Phys. Lett. 69, 2267 (1996).
7. C. Gavin, G. Martin, and C. Richard, Thin Solid Films 511, 654 (2006).
8. P. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
9. C. Jeong, M. Jeon, T. W. Kim, S. Boo, and K. Kamisako, J. Nanosci. Nanotechnol. 8, 4662 (2008).
10. M. A. Green, E. C. Cho, Y. H. Cho, Y. Huang, E. Pink, T. Trupke, A. Lin, T. Fangsuwannarak, T. Puzzer, G. Conibeer, and R. Corkish, Proceedings of 20th European Photovoltaic Solar Solar Energy Conference and Exhibition, Barcelona, Spain (2005), p. 3.
11. T. Takagahara and K. Takeda, Phys. Tev. B 46, 15578 (1992).
12. B. Rezgui, A. Sibai, T. Nychyporuk, M. Lemiti, G. Bremond, D. Maestre, and O. Palais, Appl. Phys. Lett. 96, 183105 (2010).
13. X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, Nanotechnology 20, 485703 (2009).
14. N. M. Park, S. H. Kim, G. Y. Sung, and S. J. Park, Chem. Vap. Deposition 8, 254 (2002).
15. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, and M. Schmidt, Appl. Phys. Lett. 80, 661 (2002).
16. T. Y. Kim, N. M. Park, K. H. Kim, and G. Y. Sung, Appl. Phys. Lett. 85, 5355 (2004).
17. Y. Kurokawa, S. Miyajima, A. Yamada, and M. Konagai, Japan. J. Appl. Phys. 45, L1064 (2006).
18. A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, Nano 4, 265 (2009).
19. D. Y. Song, E. C. Cho, G. Conibeer, Y. H. Cho, Y. D. Huang, S. Huang, C. Flynn, and M. A. Green, J. Vac. Sci. Technol. B 25, 1327 (2007).
20. Q. J. Cheng, S. Y. Xu, and K. Ostrikov, Acta Materialia 58, 560 (2010).
21. G. M. Ingo, N. Zacchetti, D. Della Sala, and C. Coluzza, J. Vac. Sci. Technol. A 7, 3048 (1989).
22. S. Y. Song, E. C. Cho, G. Conibeer, Y. D. Huang, C. Flynn, and M. A. Green, J. Appl. Phys. 103, 083544 (2008).
23. C. Eun-Chel, G. Martin, and C. Gavin, Advances in Opto Electronics 2007, 1 (2007).
24. A. Nakajima, Encyclopedia of Nanoscience and Nanotechnology, edited H. S. Nalwa, American Scientific Publishers, USA (2004), Vol. 9, p. 837.
25. J. Zi, H. Buscher, C. Falter, W. Ludwig, K. M. Zhang, and X. D. Xie, Appl. Phys. Lett. 69, 200 (1996).
26. A. K. Panchal and C. S. Solanki, J. Crystal Growth 311, 2659 (2009).
27. L. Torrison, J. Tolle, D. J. Smith, C. Poweleit, J. Menedez, M. M. Mitan, T. L. Alford, and J. Kouvetakis, J. Appl. Phys. 92, 7475 (2002).
28. X. S. Li, W. W. Cai, L. G. Colombo, and R. S. Ruoff, Nano Letters 9, 4268 (2009).