Investigation on the surface passivation of intrinsic a-Si:H thin films prepared by inductively coupled plasma-chemical vapor deposition for heterojunction solar cell applications

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4662-4665

  Jeong, Chaehwan ^a   Jeon, Minsung ^b   Kim, Tae Won ^a   Boo, Seongjae ^a   Kamisako, Koichi ^b  

^a Korea Institute of Industrial Technology   (South Korea)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Amorphous; Heterojunction; ICP CVD; Intrinsic; QSSPC; Si; Solar cell

Indexed keywords

AMORPHOUS; ICP-CVD; INTRINSIC; QSSPC; SI;

AMORPHOUS SILICON; ANNEALING; CARRIER LIFETIME; CELLS; CIVIL AVIATION; CYTOLOGY; DEPOSITION; INDUCTIVELY COUPLED PLASMA; PASSIVATION; PHOTORESISTS; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; THICK FILMS; THIN FILMS; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 55849137996     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC08     Document Type: Conference Paper

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