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Volumn 520, Issue 8, 2012, Pages 3374-3378

Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

(2) Nakayama, T a Kobinata, K a

a CHIBA UNIVERSITY (Japan)

Author keywords

First principles calculation; Metal Si interface; Schottky barrier; Segregation; Structural disorder

Indexed keywords

FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; HOLE CARRIERS; INTERSTITIALS; METAL/SI INTERFACE; METAL/SI INTERFACES; SCHOTTKY BARRIERS; SI ATOMS; SI DANGLING BONDS; STRUCTURAL DISORDERS; VALENCIES;

CALCULATIONS; SCHOTTKY BARRIER DIODES; SILICON;

SEGREGATION (METALLOGRAPHY);

EID: 84857065257 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.091 Document Type: Conference Paper

Times cited : (11)

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