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Volumn 86, Issue 7-9, 2009, Pages 1718-1721
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Stability and Schottky barrier of silicides: First-principles study
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Author keywords
First principles calculation; Schottky barrier; Silicide; Silicide Si interfaces; Stability
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Indexed keywords
BOND-BREAKING;
D ORBITALS;
ELASTIC STRAIN;
ELECTRON TRANSFER;
ENERGY LOSS;
FIRST-PRINCIPLES CALCULATION;
FIRST-PRINCIPLES STUDY;
METAL ATOMS;
SCHOTTKY BARRIER;
SCHOTTKY BARRIERS;
SI SUBSTRATES;
SILICIDE/SI INTERFACES;
ATOMS;
ENERGY DISSIPATION;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SOLID STATE PHYSICS;
STOICHIOMETRY;
SILICIDES;
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EID: 67349195748
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2009.03.018 Document Type: Article |
Times cited : (12)
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References (9)
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