Why and how atom intermixing proceeds at metal/Si interfaces; silicide formation vs. random mixing

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 787-795

  Nakayama, T ^a   Shinji, S ^a   Sotome, S ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; GERMANIUM COMPOUNDS; MIXING; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; STOICHIOMETRY; SUBSTRATES;

ATOM DIFFUSION; FIRST PRINCIPLES; MOTIVE FORCES; RANDOM MIXING; SCHOTTKY BARRIERS; SI SUBSTRATES; SILICIDE FORMATION; THEORETICAL CALCULATIONS;

SI-GE ALLOYS;

EID: 63149193318     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986838     Document Type: Conference Paper

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