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Volumn 41, Issue 4, 2002, Pages 2171-2175
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Electronic structures and etching processes of chlorinated Si(111) surfaces
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Author keywords
Activa tion energy; Chlorine; Collision; Dichloride; Etching; Evaporation; Monochloride; Si(111) surface; Trichloride
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Indexed keywords
ACTIVATION ENERGY;
CHLORINATION;
COMPUTER AIDED SOFTWARE ENGINEERING;
DESORPTION;
ELECTRONIC STRUCTURE;
ETCHING;
EVAPORATION;
PROBABILITY DENSITY FUNCTION;
SURFACE TREATMENT;
DENSITY FUNCTIONAL THEORY;
DICHLORIDE;
DIMER-ADATOM-STACKING FAULT STRUCTURE;
FIRST PRINCIPLES CALCULATIONS;
MONOCHLORIDE;
TOKYO AB INITIO PROGRAM PACKAGE CODE;
SEMICONDUCTING SILICON;
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EID: 0036529347
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.2171 Document Type: Article |
Times cited : (25)
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References (33)
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