Chemical trend of Schottky-barrier change by segregation layers at metal/Si interfaces: First-principles study

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 913-919

  Nakayama, T ^a   Maruta, Y ^a   Kobinata, Y ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL STABILITY; GERMANIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICON;

CHEMICAL TREND; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; SCHOTTKY BARRIERS; SEGREGATION LAYERS; SI ATOMS; VALENCIES;

SI-GE ALLOYS;

EID: 79952692457     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487622     Document Type: Conference Paper

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