Single metal/single dielectric gate stack realizing triple effective workfunction for embedded memory application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 46-47

  Manabe, Kenzo ^a   Masuzaki, Koji ^a   Ogura, Takashi ^b   Nakagawa, Takashi ^a   Saitoh, Motofumi ^a   Sunamura, Hiroshi ^a   Tatsumi, Toru ^a   Watanabe, Hirohito ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); METALS;

BAND EDGES; EMBEDDED MEMORIES; GATE STACKS; METAL GATES; VLSI TECHNOLOGIES; WORK-FUNCTIONS;

TECHNOLOGY;

EID: 51949103441     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588558     Document Type: Conference Paper

References (4)

1. K. Takeuchi, T. Tatsumi and A. Furukawa, IEDM p. 841 (1997)
2. J. Kedzierski et al., IEDM 2003, p. 315 (2003).
3. Y. Tsuchiya et al., IEDM 2006, p. 231 (2006).
4. M. Saitoh et al., Symp. on VLSI Tech. p. 162 (2006).