GaN-based nanowire photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8268, Issue , 2012, Pages

  Gonzalez Posada F ^a   Songmuang, R ^a   Den Hertog, M ^a   Monroy, E ^a  

^a CEA GRENOBLE   (France)

Author keywords

GaN; nanowire; Nitrides; photodetector; ultraviolet

Indexed keywords

ACTIVE REGIONS; CHEMICAL ENVIRONMENT; COMPREHENSIVE STUDIES; DEFECT-FREE; EXCITATION POWER; GAN; GAN NANOWIRES; MEASURING FREQUENCY; ORDERS OF MAGNITUDE; PERSISTENT PHOTOCONDUCTIVITY; PHOTORESPONSES; SPECTRAL RESPONSE; SURFACE BAND BENDING; TIME RESPONSE; ULTRAVIOLET;

NANOPHOTONICS; NANOWIRES; NITRIDES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 84856934166     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.914384     Document Type: Conference Paper

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