Conductive-probe atomic force microscopy characterization of silicon nanowire

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Alvarez, José ^a   Ngo, Irène ^a   Gueunier Farret, Marie Estelle ^a   Kleider, Jean Paul ^a   Yu, Linwei ^b   Rocai Cabarrocas, Pere ^b   Perraud, Simon ^c   Rouvière, Emmanuelle ^c   Celle, Caroline ^c   Mouchet, Céline ^c   Simonato, Jean Pierre ^c  

^a UNIV PARIS SUD   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; NANOWIRES; PHOSPHORUS; PROBES; SILICON COMPOUNDS; ELECTRIC PROPERTIES; GOLD COATINGS; GOLD DEPOSITS; LIQUIDS; WIRE;

CONDUCTIVE PROBE ATOMIC FORCE MICROSCOPIES; CURRENT VOLTAGE MEASUREMENT; ELECTRICAL CONDUCTION PROPERTIES; INTERNAL MICROSTRUCTURE; POWER-LAW BEHAVIOR; SOLID-LIQUID-SOLID; SPACE CHARGE LIMITED CONDUCTION; VAPOR-LIQUID-SOLID PROCESS; AFM TIP; CURRENT MAPPING; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CONDUCTION; IN-PLANE; N TYPE SILICON; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; SILICON NANOWIRES; SPACE-CHARGE LIMITED CONDUCTION;

AMORPHOUS SILICON;

EID: 82655175809     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-110     Document Type: Article

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