Ultra-thin atomic layer deposited tin films: Non-linear I-V behaviour and the importance of surface passivation

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 9, 2011, Pages 8120-8125

  Van Bui, H ^a   Aarnink, A A I ^a   Kovalgin, A Y ^a   Wolters, R A M ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Circular transfer length method; I V characteristics; Resistivity; Thin films; Titanium nitride

Indexed keywords

AMORPHOUS SILICON LAYERS; APPLIED VOLTAGES; ATOMIC LAYER DEPOSITED; CIRCULAR TRANSFER LENGTH METHODS; CURRENT VOLTAGE CURVE; ELECTRICAL MEASUREMENT; ELECTRICAL RESISTIVITY; IV CHARACTERISTICS; SURFACE PASSIVATION; TIN FILMS; TIN LAYERS; TIN THIN FILMS; ULTRA-THIN;

ELECTRIC CONDUCTIVITY; IODINE; METALLIC FILMS; THICK FILMS; THIN FILMS; TIN; TINNING; TITANIUM NITRIDE;

VANADIUM;

EID: 84856925448     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.5069     Document Type: Conference Paper

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