SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

Growth kinetics and oxidation mechanism of ALD TiN thin films monitored by in situ spectroscopic ellipsometry

(6) Van Bui, H a Groenland, A W a Aarnink, A A I a Wolters, R A M a,b Schmitz, J a Kovalgin, A Y a

a UNIVERSITY OF TWENTE (Netherlands)

b NXP SEMICONDUCTORS (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; COLUMNAR STRUCTURES; DEPTH-PROFILE ANALYSIS; DRY OXYGEN; EX SITU; IMPURITY CONTENT; IN-SITU; IN-SITU MONITORING; LINEAR REGIME; OPTICAL MODELS; OXIDATION BEHAVIORS; OXIDATION MECHANISMS; THIN TIN; THREE-LAYER; TIN FILMS; TIN THIN FILMS; TITANIUM CHLORIDE; TRANSIENT STAGE; TWO-REGIME; XPS;

AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; CHLORINE; CHLORINE COMPOUNDS; GROWTH KINETICS; METALLIC FILMS; OXYGEN; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TITANIUM; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDATION;

EID: 79551602492 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3530090 Document Type: Article

Times cited : (62)

References (39)

1
- 79551593422
- See ITRS Roadmain, Last accessed 2009.
- See ITRS Roadmap in www.itrs.net/reports.html, Last accessed 2009.

2
- 19944370832
- Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
- DOI 10.1016/j.mee.2005.04.035, PII S0167931705001735, 14th Biennial Conference on Insulating Films on Semiconductors
- R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, B. Jin, M. Metz, A. Majumdar, Microelectron. Eng., 80, 1 (2005). 10.1016/j.mee.2005.04.035 (Pubitemid 40753037)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 1-6
- Chau, R.¹ Brask, J.² Datta, S.³ Dewey, G.⁴ Doczy, M.⁵ Doyle, B.⁶ Kavalieros, J.⁷ Jin, B.⁸ Metz, M.⁹ Majumdar, A.¹⁰ Radosavljevic, M.¹¹

3
- 0036494099
- Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon
- DOI 10.1116/1.1450580
- G. S. Chen, J. J. Guo, C. K. Lin, C.-S. Hsu, L. C. Yang, and J. S. Fang, J. Vac. Sci. Technol. A, 20, 479 (2002). 10.1116/1.1450580 (Pubitemid 34405117)
- (2002) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.20 , Issue.2 , pp. 479-485
- Chen, G.S.¹ Guo, J.J.² Lin, C.K.³ Hsu, C.-S.⁴ Yang, L.C.⁵ Fang, J.S.⁶

4
- 0034275608
- 10.1116/1.1288942
- H. Mu, Y. Yu, E. Z. Luo, B. Sundaravel, S. P. Wong, and I. H. Wilson, J. Vac. Sci. Technol. A, 18, 2312 (2000). 10.1116/1.1288942
- (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 2312
- Mu, H.¹ Yu, Y.² Luo, E.Z.³ Sundaravel, B.⁴ Wong, S.P.⁵ Wilson, I.H.⁶

5
- 3342970606
- 10.1063/1.1322068
- E. K. Evangelou, N. Konofaos, X. A. Aslanoglou, C. A. Dimitriadis, P. Patsalas, S. Logothetidis, M. Kokkoris, E. Kossionides, R. Vlastou, and R. Groetschel, J. Appl. Phys., 88, 7192 (2000). 10.1063/1.1322068
- (2000) J. Appl. Phys. , vol.88 , pp. 7192
- Evangelou, E.K.¹ Konofaos, N.² Aslanoglou, X.A.³ Dimitriadis, C.A.⁴ Patsalas, P.⁵ Logothetidis, S.⁶ Kokkoris, M.⁷ Kossionides, E.⁸ Vlastou, R.⁹ Groetschel, R.¹⁰

6
- 33846967539
- Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes
- DOI 10.1109/TED.2005.856796
- G. Sjöblom, J. Westlinder, and J. Olsson, IEEE Trans. Electron Devices, 52, 2349 (2005). 10.1109/TED.2005.856796 (Pubitemid 46446480)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.10 , pp. 2349-2352
- Sjoblom, G.¹ Westlinder, J.² Olsson, J.³

7
- 34248643162
- Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility
- DOI 10.1016/j.mee.2007.04.080, PII S0167931707004315, INFOS 2007
- Y. X. Liu, T. Matsukawa, K. Endo, M. Masahrara, S. O'uchi, H. Yamauchi, K. Ishii, J. Tsukada, Y. Ishikawa, K. Sakamoto, Microelectron. Eng., 84, 2101 (2007). 10.1016/j.mee.2007.04.080 (Pubitemid 46776992)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2101-2104
- Liu, Y.X.¹ Matsukawa, T.² Endo, K.³ Masahrara, M.⁴ O'uchi, S.⁵ Yamauchi, H.⁶ Ishii, K.⁷ Tsukada, J.⁸ Ishikawa, Y.⁹ Sakamoto, K.¹⁰ Suzuki, E.¹¹

8
- 0032620822
- 10.1063/1.124742
- J. S. Min, H. S. Park, and S. W. Kang, Appl. Phys. Lett., 75, 1521 (1999). 10.1063/1.124742
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1521
- Min, J.S.¹ Park, H.S.² Kang, S.W.³

9
- 0038201061
- 10.1016/S0040-6090(03)00533-9
- J. W. Elam, M. Schuisky, J. D. Ferguson, and S. M. George, Thin Solid Films, 436, 145 (2003). 10.1016/S0040-6090(03)00533-9
- (2003) Thin Solid Films , vol.436 , pp. 145
- Elam, J.W.¹ Schuisky, M.² Ferguson, J.D.³ George, S.M.⁴

10
- 57149143176
- 10.1016/j.mee.2008.09.036
- J. Musschoot, Q. Xie, D. Deduytsche, S. van den Berghe, R. L. van Meirhaeghe, and C. Detavernier, Microelectron. Eng., 86, 72 (2009). 10.1016/j.mee.2008.09.036
- (2009) Microelectron. Eng. , vol.86 , pp. 72
- Musschoot, J.¹ Xie, Q.² Deduytsche, D.³ Van Den Berghe, S.⁴ Van Meirhaeghe, R.L.⁵ Detavernier, C.⁶

11
- 0037115655
- 10.1063/1.1522485
- A. Satta, J. Schuhmacher, C. M. Whelan, W. Vandervorst, S. H. Brongersma, A. Vantomme, M. M. Viitanen, H. H. Brongersma, and W. F. A. Besling, J. Appl. Phys., 92, 7641 (2002). 10.1063/1.1522485
- (2002) J. Appl. Phys. , vol.92 , pp. 7641
- Satta, A.¹ Schuhmacher, J.² Whelan, C.M.³ Vandervorst, W.⁴ Brongersma, S.H.⁵ Vantomme, A.⁶ Viitanen, M.M.⁷ Brongersma, H.H.⁸ Besling, W.F.A.⁹

12
- 0037446482
- 10.1016/S0169-4332(03)00158-2
- J. Kim, H. Hong, K. Oh, and C. Lee, Appl. Surf. Sci., 210, 231 (2003). 10.1016/S0169-4332(03)00158-2
- (2003) Appl. Surf. Sci. , vol.210 , pp. 231
- Kim, J.¹ Hong, H.² Oh, K.³ Lee, C.⁴

13
- 33746373951
- 4 and ammonia
- DOI 10.1021/jp062019f
- H. Tiznado and F. Zaera, J. Phys. Chem. B, 110, 13491 (2006). 10.1021/jp062019f (Pubitemid 44115589)
- (2006) Journal of Physical Chemistry B , vol.110 , Issue.27 , pp. 13491-13498
- Tiznado, H.¹ Zaera, F.²

14
- 38949206831
- Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth
- DOI 10.1016/j.molcata.2007.06.010, PII S1381116907003846
- H. Tiznado, M. Boumen, B. C. Kang, I. Lee, and F. Zaera, J. Mol. Catal. A: Chem., 281, 35 (2008). 10.1016/j.molcata.2007.06.010 (Pubitemid 351215952)
- (2008) Journal of Molecular Catalysis A: Chemical , vol.281 , Issue.1-2 , pp. 35-43
- Tiznado, H.¹ Bouman, M.² Kang, B.-C.³ Lee, I.⁴ Zaera, F.⁵

15
- 34548275425
- Deposition of TiN and Hf O2 in a commercial 200 mm remote plasma atomic layer deposition reactor
- DOI 10.1116/1.2753846
- S. B. S. Heil, J. L. van Hemmen, C. J. Hodson, N. Singh, J. H. Klootwijk, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A, 25, 1357 (2007). 10.1116/1.2753846 (Pubitemid 47330598)
- (2007) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.25 , Issue.5 , pp. 1357-1366
- Heil, S.B.S.¹ Van Hemmen, J.L.² Hodson, C.J.³ Singh, N.⁴ Klootwijk, J.H.⁵ Roozeboom, F.⁶ Van De Sanden, M.C.M.⁷ Kessels, W.M.M.⁸

16
- 36549102718
- 10.1063/1.96151
- W. Sinke, G. P. A. Frijlink, and F. W. Saris, Appl. Phys. Lett., 47, 471 (1985). 10.1063/1.96151
- (1985) Appl. Phys. Lett. , vol.47 , pp. 471
- Sinke, W.¹ Frijlink, G.P.A.² Saris, F.W.³

17
- 21144482183
- 10.1116/1.578718
- L. Soriano, M. Abbate, J. C. Fuggle, P. Prieto, C. Jimenez, J. M. Sanz, L. Galan, and S. Hofmann, J. Vac. Sci. Technol. A, 11, 47 (1993). 10.1116/1.578718
- (1993) J. Vac. Sci. Technol. A , vol.11 , pp. 47
- Soriano, L.¹ Abbate, M.² Fuggle, J.C.³ Prieto, P.⁴ Jimenez, C.⁵ Sanz, J.M.⁶ Galan, L.⁷ Hofmann, S.⁸

18
- 36449001763
- 10.1063/1.351465
- N. C. Saha and H. G. Tompkins, J. Appl. Phys., 72, 3072 (1991). 10.1063/1.351465
- (1991) J. Appl. Phys. , vol.72 , pp. 3072
- Saha, N.C.¹ Tompkins, H.G.²

19
- 36449003873
- 10.1063/1.349194
- H. G. Tompkins, J. Appl. Phys., 70, 3876 (1991). 10.1063/1.349194
- (1991) J. Appl. Phys. , vol.70 , pp. 3876
- Tompkins, H.G.¹

20
- 0008839070
- 10.1063/1.126626
- P. Hones, C. Zakri, P. E. Schmid, F. Levy, and O. R. Shojaei, Appl. Phys. Lett., 76, 3194 (2000). 10.1063/1.126626
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3194
- Hones, P.¹ Zakri, C.² Schmid, P.E.³ Levy, F.⁴ Shojaei, O.R.⁵

21
- 0031493594
- Comparison of surface oxidation of titanium nitride and chromium nitride films studied by x-ray absorption and photoelectron spectroscopy
- DOI 10.1116/1.580764
- F. Esaka, K. Furuya, H. Shimada, M. Imamura, N. Matsubayashi, H. Sato, A. Nishijima, A. Kawana, H. Ichimura, and T. Kikuchi, J. Vac. Sci. Technol. A, 15, 2521 (1997). 10.1116/1.580764 (Pubitemid 127127732)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.5 , pp. 2521-2528
- Esaka, F.¹ Furuya, K.² Shimada, H.³ Imamura, M.⁴ Matsubayashi, N.⁵ Sato, N.⁶ Nishijima, H.⁷ Kawana, A.⁸ Ichimura, A.⁹ Kikuchi, T.¹⁰

22
- 31044454918
- Oxidation behavior of titanium nitride films
- DOI 10.1116/1.1914815
- H. Y. Chen and F. H. Lu, J. Vac. Sci. Technol. A, 23, 1006 (2005). 10.1116/1.1914815 (Pubitemid 43119239)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.4 , pp. 1006-1009
- Chen, H.-Y.¹ Lu, F.-H.²

23
- 0020748299
- 10.1149/1.2119919
- I. Suni, D. Sigurd, K. T. Ho, and M. A. Nicolet, J. Electrochem. Soc., 130, 1210 (1983). 10.1149/1.2119919
- (1983) J. Electrochem. Soc. , vol.130 , pp. 1210
- Suni, I.¹ Sigurd, D.² Ho, K.T.³ Nicolet, M.A.⁴

24
- 23744493908
- 1.5N barrier films for Cu metallization process and characterization
- DOI 10.1149/1.1928171
- S. Bystrova, A. A. I. Aarnink, J. Holleman, and R. A. M. Wolters, J. Electrochem. Soc., 152, G522 (2005). 10.1149/1.1928171 (Pubitemid 41119356)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.7
- Bystrova, S.¹ Aarnink, A.A.I.² Holleman, J.³ Wolters, R.A.M.⁴

25
- 44649110202
- 3
- DOI 10.1063/1.2924406
- S. B. S. Heil, J. L. van Hemmen, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys., 103, 103302 (2008). 10.1063/1.2924406 (Pubitemid 351776438)
- (2008) Journal of Applied Physics , vol.103 , Issue.10 , pp. 103302
- Heil, S.B.S.¹ Van Hemmen, J.L.² Van De Sanden, M.C.M.³ Kessels, W.M.M.⁴

26
- 63649098537
- 10.1088/0022-3727/42/7/073001
- E. Langereis, S. B. S. Heil, H. C. M. Knoops, W. Keuning, M. C. M. van de Sanden, and W. M. M. Kessels, J. Phys. D: Appl. Phys., 42, 073001 (2009). 10.1088/0022-3727/42/7/073001
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 073001
- Langereis, E.¹ Heil, S.B.S.² Knoops, H.C.M.³ Keuning, W.⁴ Van De Sanden, M.C.M.⁵ Kessels, W.M.M.⁶

27
- 84882904739
- William Andrew, New York.
- H. G. Tompkins and E. A. Irene, Handbook of Ellipsometry, William Andrew, New York (2005).
- (2005) Handbook of Ellipsometry
- Tompkins, H.G.¹ Irene, E.A.²

28
- 84889844015
- John Wiley & Sons, New York.
- H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications, John Wiley & Sons, New York (2007).
- (2007) Spectroscopic Ellipsometry: Principles and Applications
- Fujiwara, H.¹

29
- 0003740393
- Academic Press, New York.
- F. Wooten, Optical Properties of Solids, Academic Press, New York (1972).
- (1972) Optical Properties of Solids
- Wooten, F.¹

30
- 0037439464
- 10.1063/1.1531812
- P. Patsalas and S. Logothetidis, J. Appl. Phys., 93, 989 (2003). 10.1063/1.1531812
- (2003) J. Appl. Phys. , vol.93 , pp. 989
- Patsalas, P.¹ Logothetidis, S.²

31
- 0035502967
- 10.1063/1.1403677
- P. Patsalas and S. Logothetidis, J. Appl. Phys., 90, 4725 (2001). 10.1063/1.1403677
- (2001) J. Appl. Phys. , vol.90 , pp. 4725
- Patsalas, P.¹ Logothetidis, S.²

32
- 0141857374
- 10.1063/1.1599978
- M. A. Alam and M. L. Green, J. Appl. Phys., 94, 3403 (2003). 10.1063/1.1599978
- (2003) J. Appl. Phys. , vol.94 , pp. 3403
- Alam, M.A.¹ Green, M.L.²

33
- 0001524926
- 10.1063/1.118064
- G. E. Jellison and F. A. Modine, Appl. Phys. Lett., 69, 371 (1996). 10.1063/1.118064
- (1996) Appl. Phys. Lett. , vol.69 , pp. 371
- Jellison, G.E.¹ Modine, F.A.²

34
- 34047276650
- 2 films with high refractive index deposited by pulsed bias arc ion plating
- DOI 10.1016/j.surfcoat.2007.01.043, PII S0257897207000692
- M. Zhang, G. Lin, C. Dong, and L. Wen, Surf. Coat. Technol., 201, 7252 (2007). 10.1016/j.surfcoat.2007.01.043 (Pubitemid 46547395)
- (2007) Surface and Coatings Technology , vol.201 , Issue.16-17 , pp. 7252-7258
- Zhang, M.¹ Lin, G.² Dong, C.³ Wen, L.⁴

35
- 0003998388
- 90th ed., CRC Press, Boca Raton, FL.
- D. R. Lide and W. M. Haynes, CRC Handbook of Chemistry and Physics, 90th ed., CRC Press, Boca Raton, FL (2010).
- (2010) CRC Handbook of Chemistry and Physics
- Lide, D.R.¹ Haynes, W.M.²

36
- 23844477274
- On the preferential formation of anatase in amorphous titanium oxide film
- DOI 10.1016/j.scriptamat.2005.07.007, PII S1359646205004227
- T. Nakamura, T. Ichitsubo, E. Matsubara, A. Muramatsu, N. Sato, and H. Takahashi, Scr. Mater., 53, 1019 (2005). 10.1016/j.scriptamat.2005.07.007 (Pubitemid 41172338)
- (2005) Scripta Materialia , vol.53 , Issue.9 , pp. 1019-1023
- Nakamura, T.¹ Ichitsubo, T.² Matsubara, E.³ Muramatsu, A.⁴ Sato, N.⁵ Takahashi, H.⁶

37
- 19944393904
- An approach to modeling of silicon oxidationin a wet ultra-diluted ambient
- DOI 10.1016/j.mee.2005.04.101, PII S0167931705002406, 14th Biennial Conference on Insulating Films on Semiconductors
- A. Kovalgin, A. Hof, and J. Schmitz, Microelectron. Eng., 80, 432 (2005). 10.1016/j.mee.2005.04.101 (Pubitemid 40753125)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 432-435
- Kovalgin, A.¹ Hof, A.² Schmitz, J.³

38
- 0142195475
- R. B. Beck and B. Majkusiak, Electron Technol., 21, 65 (1988).
- (1988) Electron Technol. , vol.21 , pp. 65
- Beck, R.B.¹ Majkusiak, B.²

39
- 33846314686
- A pillar-shaped antifuse-based silicon chemical sensor and actuator
- DOI 10.1109/JSEN.2006.888602
- A. Y. Kovalgin, J. Holleman, and G. Iordache, IEEE Sens. J., 7, 18 (2007). 10.1109/JSEN.2006.888602 (Pubitemid 46113461)
- (2007) IEEE Sensors Journal , vol.7 , Issue.1 , pp. 18-26
- Kovalgin, A.Y.¹ Holleman, J.² Iordache, G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.