SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1051-1059

DYNAMOS: A numerical MOSFET model including quantum-mechanical and near-interface trap transient effects

(3) Masson, Pascal a Autran, Jean Luc b Munteanu, Daniela b,c

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b AIX MARSEILLE UNIVERSITÉ (France)

c CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON TRAPS; INTERFACES (MATERIALS); POISSON EQUATION; QUANTUM THEORY; STATISTICAL METHODS; ULTRATHIN FILMS;

ULTRA-THIN GATE OXIDES;

MOSFET DEVICES;

EID: 0036642961 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(02)00041-2 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.