MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Materials Science and Engineering C

Volumn 15, Issue 1-2, 2001, Pages 145-147

  Normand, P ^a   Kapetanakis, E ^a   Tsoukalas, D ^a   Kamoulakos, G ^a   Beltsios, K ^b   Van Den Berg, J ^c   Zhang, S ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Implantation; Memory; Nanocrystals; Si

Indexed keywords

DEVICE TRANSFER;

ANNEALING; ARRAYS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICON;

MOS DEVICES;

NANOCRYSTAL;

EID: 0034840713     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00251-X     Document Type: Article

References (5)