-
1
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
June
-
J. J. Yang et al., "Memristive switching mechanism for metal/oxide/metal nanodevices", J. Nature Nanotechnology, vol. 3, pp. 429-433, June 2008.
-
(2008)
J. Nature Nanotechnology
, vol.3
, pp. 429-433
-
-
Yang, J.J.1
-
2
-
-
12344261603
-
Prospects for terabit-scale nanoelectronic memories
-
Jan.
-
D. B. Strukov et al., "Prospects for terabit-scale nanoelectronic memories", Nanotechnology, vol. 16, no. 1, pp. 137-148, Jan. 2005.
-
(2005)
Nanotechnology
, vol.16
, Issue.1
, pp. 137-148
-
-
Strukov, D.B.1
-
3
-
-
33846807711
-
Nano/CMOS architectures using a field-programmable nanowire interconnect
-
Jan.
-
G. S. Snider et al., "Nano/CMOS architectures using a field-programmable nanowire interconnect", Nanotechnology, vol. 18, no. 3, pp. 1-11, Jan. 2007.
-
(2007)
Nanotechnology
, vol.18
, Issue.3
, pp. 1-11
-
-
Snider, G.S.1
-
4
-
-
85015357431
-
Nanowire-based programmable architectures
-
July
-
A. Dehon, "Nanowire-based programmable architectures", ACM J. on Emerging Technologies in Computing Systems, vol. 1, no. 2, pp. 109-162, July 2005.
-
(2005)
ACM J. on Emerging Technologies in Computing Systems
, vol.1
, Issue.2
, pp. 109-162
-
-
Dehon, A.1
-
5
-
-
84856199212
-
Memristor memory readied for production: HP plans new nonvolatile memory for 2013
-
Available online
-
MIT Technology Review, "Memristor memory readied for production: HP plans new nonvolatile memory for 2013", Available online http://technologyreview.com/computing/25018/page1/
-
MIT Technology Review
-
-
-
6
-
-
34248632540
-
Defect and transient fault-tolerant system design for hybrid CMOS/nanodevice digital memories
-
May
-
F. Sun et al., "Defect and transient fault-tolerant system design for hybrid CMOS/nanodevice digital memories", IEEE Trans. on Nanotechnology, vol. 6, no. 3, pp. 341-351, May 2007.
-
(2007)
IEEE Trans. on Nanotechnology
, vol.6
, Issue.3
, pp. 341-351
-
-
Sun, F.1
-
7
-
-
79951535161
-
Redundant residue number system code for fault-tolerant hybrid memories
-
article 4
-
N. Z. Haron et al., "Redundant residue number system code for fault-tolerant hybrid memories", ACM J. of Emerging Technologies in Computing Systems, vol. 7, no. 1, article 4, 2011.
-
(2011)
ACM J. of Emerging Technologies in Computing Systems
, vol.7
, Issue.1
-
-
Haron, N.Z.1
-
8
-
-
0034505514
-
An experimental analysis of spot defects in SRAMs: Realistic fault models and tests
-
S. Hamdioui et al., "An experimental analysis of spot defects in SRAMs: realistic fault models and tests", in Proc. of Asian Test Symp., pp. 131-138, 2000.
-
(2000)
Proc. of Asian Test Symp.
, pp. 131-138
-
-
Hamdioui, S.1
-
9
-
-
43049126833
-
The missing memristor found
-
May
-
D. B. Strukov et al., "The missing memristor found", Nature Letters, vol. 453, pp. 80-83, May 2008.
-
(2008)
Nature Letters
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
-
10
-
-
84855794958
-
Design implications of memristor-based RRAM cross-point structures
-
C. Xu et al., "Design implications of memristor-based RRAM cross-point structures", in Proc. Design, Automation and Test in Europe, pp. 1-6, 2011.
-
(2011)
Proc. Design, Automation and Test in Europe
, pp. 1-6
-
-
Xu, C.1
-
11
-
-
79953272066
-
Dynamical properties and design analysis for nonvolatile memristor memories
-
April
-
Y. Ho et al., "Dynamical properties and design analysis for nonvolatile memristor memories", IEEE Trans. on Circuits and Systems-I: Regular Papers, vol. 58, no. 4, pp. 724-736, April 2011.
-
(2011)
IEEE Trans. on Circuits and Systems-I: Regular Papers
, vol.58
, Issue.4
, pp. 724-736
-
-
Ho, Y.1
-
12
-
-
84856195785
-
The fourth element: Characteristics, modelling and electromagnetic theory of the memristor
-
O. Kavehei et al., "The fourth element: characteristics, modelling and electromagnetic theory of the memristor", in Proc. of the Royal Society Mathematical, Physical & Engineering Sciences, pp. 1-28, 2010.
-
(2010)
Proc. of the Royal Society Mathematical, Physical & Engineering Sciences
, pp. 1-28
-
-
Kavehei, O.1
-
14
-
-
33748533457
-
Three dimensional integrated circuits
-
A. W. Topol et al., "Three dimensional integrated circuits", IBM J. of Research and Development, vol. 50., no. 4/5, pp. 491-506, 2006.
-
(2006)
IBM J. of Research and Development
, vol.50
, Issue.4-5
, pp. 491-506
-
-
Topol, A.W.1
-
15
-
-
33947241222
-
Opens and delay faults in CMOS RAM address decoders
-
S. Hamdioui et al., "Opens and delay faults in CMOS RAM address decoder", IEEE Trans. on Computers, vol. 55, no. 12, pp. 1630-1639, Dec 2006. (Pubitemid 46432397)
-
(2006)
IEEE Transactions on Computers
, vol.55
, Issue.12
, pp. 1630-1639
-
-
Hamdioui, S.1
Al-Ars, Z.2
Van De, G.A.J.3
-
16
-
-
18144430666
-
Detecting faults in the peripheral circuits and an evaluation of SRAM tests
-
A. J. van der Goor et al., "Detecting faults in the peripheral circuits and an evaluation of SRAM tests", in Proc. of Int'l Test Conf., pp. 114-123, 2004.
-
(2004)
Proc. of Int'l Test Conf.
, pp. 114-123
-
-
Van Der Goor, A.J.1
-
17
-
-
18144415503
-
Systematic defects in deep sub-micron technologies
-
B. Kruseman et al., "Systematic defects in deep sub-micron technologies", in Proc. of Int'l Test Conf., pp. 290-299, 2004.
-
(2004)
Proc. of Int'l Test Conf.
, pp. 290-299
-
-
Kruseman, B.1
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