Optical properties and chemical bonding characteristics of amorphous SiN X:H thin films grown by the plasma enhanced chemical vapor deposition method

Journal of Non-Crystalline Solids

Volumn 358, Issue 3, 2012, Pages 577-582

  He, Yin ^a   Wang, Yuanzhe ^a   Li, Wang ^b,c   Han, Weizhi ^b   Hu, Zhijuan ^a   Qin, Xiaomei ^a   Du, Guoping ^a,c   Shi, Wangzhou ^a  

^a SHANGHAI NORMAL UNIVERSITY   (China)

^b Chint Solar (Zhejiang) Co   (China)

^c NANCHANG UNIVERSITY   (China)

Author keywords

Chemical bonding; Optical properties; PECVD; Rapid thermal processing; SiN X:H thin films

Indexed keywords

CHEMICAL BONDINGS; CRYSTALLINE SILICON SOLAR CELLS; GAS-FLOW RATIO; REACTIVE PRECURSORS;

AMORPHOUS SILICON; ANTIREFLECTION COATINGS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BONDING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MORPHOLOGY; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REFRACTIVE INDEX; SILICON NITRIDE; SURFACE MORPHOLOGY; THIN FILMS;

AMORPHOUS FILMS;

EID: 84856109252     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.10.016     Document Type: Article

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