The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 2, 2011, Pages 546-550

  Jung, Sungwook ^a   Gong, Deayoung ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Antireflection coating; Band gap; Defect states; Passivation; Solar cell

Indexed keywords

AMMONIA GAS; ANTI-REFLECTION; BAND GAPS; C-SI SOLAR CELL; DEFECT STATE; DEFECT STATES; FLOW RATIOS; HIGH EFFICIENCY; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MAXIMUM EFFICIENCY; NITROGEN-RICH FILMS; PASSIVATION LAYER; SILICON NITRIDE THIN FILMS; SINGLE CRYSTALLINE SILICON; SOLAR CELL EFFICIENCIES;

AMMONIA; ANTIREFLECTION COATINGS; CARRIER LIFETIME; COATINGS; DEFECTS; ENERGY GAP; OPTIMIZATION; PASSIVATION; REFRACTIVE INDEX; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650694102     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.09.014     Document Type: Article

References (22)

1. S.W. Glunz High-efficiency crystalline silicon solar cells Adv. Optoelectron 2007 2007 1 15
2. A. Goetzberger, C. Hebling, and H.W. Schock Photovoltaic materials, history, status and outlook Mater. Sci. Eng. R 40 2003 1 46
3. L.L. Kazmerski Solar photovoltaics R&D at the tipping point: a 2005 technology overview J. Electron Spectrosc. Relat. Phenom 150 2006 105 135
4. R.W. Miles, K.M. Hynes, and I. Forbes Photovoltaic solar cells: an overview of state-of-the-art cell development and environmental issues Prog. Cryst. Growth Charact. Mater 51 2005 1 42
5. A. Goetzberger, J. Knobloch, and B. Vob In Crystalline Silicon Solar Cells 1998 John Wiley & Sons pp. 87131
6. C. Leguijt, P. Lolgen, J.A. Eikelboom, A.W. Weeber, F.M. Schuurmans, W.C. Sinke, P.F.A. Alkemade, P.M. Sarro, C.H.M. Maree, and L.A. Verhoef Low temperature surface passivation for silicon solar cells Sol. Energy Mater. Sol. Cells 40 1996 297 345
7. D.S. Ruby, W.L. Wilbanks, C.B. Fleddermann, A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells, Proceeding of the 24th IEEE Photovoltaic Specialists Conference, 1994, pp. 13351338.
8. M.J. Kerr, J. Schmidt, A. Cuevas, and J.H. Bultman Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide J. Appl. Phys 89 2001 3821 3826 (Pubitemid 33732477)
9. A.G. Aberle, and R. Hezel Progress in low-temperature surface passivation of silicon solar cells using remote-plasma silicon nitride Prog. Photovoltaics 5 1997 29 50
10. H. Nagel, A.G. Aberle, and R. Hezel Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide Prog. Photovoltaics 7 1999 245 260
11. I.O. Parm, K. Kim, D.G. Lim, J.H. Lee, J.H. Heo, J. Kim, D.S. Kim, S.H. Lee, and J. Yi High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application Sol. Energy Mater. Sol. Cells 74 2002 97 105
12. W. Soppe, H. Rieffe, and A. Weeber Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD Prog. Photovoltaics 13 2005 551 569
13. V. Verlaan, C.H.M. van der Werf, Z.S. Flouweling, G. Romijn, A.W. Weeber, H.F.W. Dekkers, H.D. Goldbach, and R.E.I. Schrop Multi-crystalline si solar cells with very fast deposited (108 nm/min) passivating hot wire CVD silicon nitride as antireflection coating Prog. Photovoltaics 15 2007 563 573
14. J.S. Yoo, S.K. Dhungel, and J.S. Yi Annealing optimization of silicon nitride film for solar cell application Thin Solid Films 515 2007 7611 7614
15. C.S. Cook, T. Daly, R. Liu, M. Canonico, Q. Xie, R.B. Gregory, and S. Zollner Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films 455 2004 794 797
16. J.J. Mei, H. Chen, W.Z. Shen, and H.F.W. Dekkers Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films J. Appl. Phys. 100 2006 073516-1-073516-9
17. S. Zollner, E. Apen, Optical constants for metrology of hydrogenated amorphous silicon-nitrogen alloys on Si, Proceeding of the International Conference on Characterization and Metrology for ULSI Technology, 2000, pp. 532537.
18. S.T. Li, S.J. Silvers, and M.S. ElShall Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique J. Phys. Chem. B 101 1997 1794 1802
19. x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering Nucl. Instrum. Meth. Phys. Res. Sect. B 240 2005 741 751
20. C.M. Mo, L. Zhang, C. Xie, and T. Wang Luminescence of nanometer-sized amorphous silicon nitride solids J. Appl. Phys. 73 1993 5185 5188
21. S. Fujita, and A. Sasaki Dangling bonds in memory-quality silicon nitride films J. Electrochem. Soc. 132 1985 398 402
22. W.L. Warren, P.M. Lenahan, and S.E. Curry First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride Phys. Rev. Lett. 65 1990 207 210