Study on hydrogenated silicon nitride for application of high efficiency crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 7-10

  Yoo, Jinsu ^a   So, Junghun ^a   Yu, Gwonjong ^a   Yi, Junsin ^b  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Antireflection; Hydrogenated silicon nitride; Plasma enhanced chemical vapor deposition; Silicon solar cells; Surface passivation

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; ANTI-REFLECTION; CAPACITANCE VOLTAGE; CHEMICAL CHARACTERIZATION; COMMONLY USED; CRYSTALLINE SILICON SOLAR CELLS; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; FILM DEPOSITION; GAS RATIO; HIGH EFFICIENCY; HYDROGENATED SILICON; INSULATOR LAYER; LOW COSTS; METAL-INSULATOR-SEMICONDUCTOR DEVICES; PASSIVATING LAYER; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD); PROCESS CONDITION; SURFACE PASSIVATION;

ANTIREFLECTION COATINGS; CRYSTALLINE MATERIALS; HYDROGENATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REFRACTIVE INDEX; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS; SOLAR CELLS; VAPOR DEPOSITION;

SILICON NITRIDE;

EID: 78149359676     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.03.031     Document Type: Conference Paper

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