Effect of rapid thermal annealing on the properties of PECVD SiNx thin films

Materials Chemistry and Physics

Volumn 106, Issue 1, 2007, Pages 130-133

  Karunagaran, B ^a   Chung, S J ^a   Velumani, S ^b   Suh, E K ^a  

^a Chonbuk National University   (South Korea)

^b SCHOOL OF ENGINEERING AND SCIENCES   (Mexico)

Author keywords

Optical properties; PECVD; RTA; SiN; Solar cell

Indexed keywords

ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; SOLAR CELLS;

CHEMICAL COMPOSITION; SILICON SURFACE STATE PASSIVATION;

THIN FILMS;

EID: 34748888489     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2007.05.028     Document Type: Article

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