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Applied Physics A: Materials Science and Processing

Volumn 106, Issue 1, 2012, Pages 191-196

The fabrication of Na doped p-type Zn 1-x Mg xO films by pulsed laser deposition

(12) Zhang, L Q a Zhang, Y Z a Ye, Z Z a Lin, S S a Lu, B a He, H P a Chen, L X a Lu, J G a Jiang, J a Wu, K W a Huang, J Y a Zhu, L P a

a ZHEJIANG UNIVERSITY (China)

Author keywords

Na doped p type Zn 1 x Mg x O; Pulsed laser deposition; Semiconductor

Indexed keywords

ABSORPTION AND PHOTOLUMINESCENCE; BAND GAP SHIFTS; HALL EFFECT MEASUREMENT; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; LINEARLY PROPORTIONAL; MG CONTENT; NA DOPED; NA DOPING; P-TYPE; RECTIFICATION BEHAVIOR; SEMICONDUCTOR; X RAY PHOTOELECTRON SPECTRA; XRD;

ALLOYING; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SODIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

PULSED LASERS;

EID: 84856055014 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6547-1 Document Type: Article

Times cited : (10)

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