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Volumn 7, Issue 4, 2009, Pages 271-273
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Efficient above-band-gap light emission in germanium
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND GAPS;
GAP TRANSITION;
II-IV SEMICONDUCTORS;
NITROGEN-DOPING;
P-TYPE;
PEAK POSITION;
PHOTOLUMINESCENCE SPECTRUM;
RADIATIVE TRANSITIONS;
SINGLE-CRYSTALLINE;
TEMPERATURE RANGE;
ACTIVATION ENERGY;
EMISSION SPECTROSCOPY;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
GERMANIUM;
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EID: 65749115382
PISSN: 16717694
EISSN: None
Source Type: Journal
DOI: 10.3788/COL20090704.0271 Document Type: Article |
Times cited : (8)
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References (17)
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