Exact determination of electrical properties of wurtzite Al 12xInxN/(AlN)/GaN heterostructures (0.07 ≤x ≤0.21) by means of a detailed charge balance equation

International Journal of Microwave and Wireless Technologies

Volumn 2, Issue 1, 2010, Pages 13-20

  Gonschorek, Marcus ^a   Carlin, Jean Francois ^a   Feltin, Eric ^a   Py, Marcel ^a   Grandjean, Nicolas ^a  

^a EPFL   (Switzerland)

Author keywords

2D electron gas; AlInN; Capacitance voltage; High electron mobility transistor; Polarization charge

Indexed keywords

100 GHZ; 2-D ELECTRON GAS (2DEG); 2D ELECTRON GAS; ALINN; ALN; BARRIER THICKNESS; CAPACITANCE VOLTAGE; CHARGE BALANCE EQUATION; DIELECTRIC CONSTANTS; ELECTRICAL PARAMETER; ELECTRICAL PROPERTY; GATE LENGTH; HETEROSTRUCTURES; LATTICE-MATCHED; POLARIZATION CHARGES; SATURATION CURRENT; SHEET CHARGE DENSITY; SI (1 1 1); STILL MISSING; SURFACE BARRIER; WURTZITES;

CAPACITANCE; CRYSTALS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LAGRANGE MULTIPLIERS; PERMITTIVITY; POLARIZATION; TWO DIMENSIONAL; ZINC SULFIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651563425     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078710000176     Document Type: Article

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