X-ray photoelectron spectroscopy depth profiling of La 2O 3/Si thin films deposited by reactive magnetron sputtering

ACS Applied Materials and Interfaces

Volumn 3, Issue 11, 2011, Pages 4370-4373

  Ramana, C V ^a   Vemuri, R S ^a   Kaichev, V V ^b   Kochubey, V A ^c   Saraev, A A ^d   Atuchin, V V ^c  

^a 500 W University Avenue   (United States)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

high k dielectric; lanthanum trioxide; RHEED; thin films; XPS

Indexed keywords

AIR ATMOSPHERE; AMORPHOUS STATE; CONTACT TIME; CORE LEVEL SPECTROSCOPY; HIGH-K DIELECTRIC; LAYER-BY-LAYERS; NORMAL CONDITION; REACTIVE DC MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING; TOP SURFACE; XPS MEASUREMENTS;

DEPTH PROFILING; HYDROCARBONS; ION BOMBARDMENT; LANTHANUM; LANTHANUM ALLOYS; LANTHANUM OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE CHEMISTRY; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84855884394     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am201021m     Document Type: Article

References (33)

1. Engström, O.; Raeissi, B.; Hall, S.; Buiu, O.; Lemme, M. C.; Gottlob, H. D. B.; Hurley, P. K.; Cherkaoui, K. Solid-State Electron. 2007, 51, 622-626
2. Lin, Y.-H.; Chien, C.-H.; Yang, T.-Y.; Lei, T.-F. J. Electrochem. Soc. 2007, 154, H619-H622
3. Robertson, J. J. Appl. Phys. 2008, 104, 124111
4. Lamanga, L.; Wiemer, C.; Perego, M.; Volkos, S. N.; Baldovino, S.; Tsoutsou, D.; Schamm-Chardon, S.; Coulon, P. E.; Fanciulli, M. J. Appl. Phys. 2010, 108, 084108
5. Kakushima, K.; Tachi, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Hattori, T.; Iwai, H. Microelectronics Rel. 2010, 50, 790-793
6. Kim, D. H.; Park, J. W.; Kim, C. O.; Chung, H.; Choi, S.-H.; Lim, D. J. Korean Phys. Soc. 2011, 58, 264-269
7. Scarel, G.; Debermardi, A.; Tsoutsou, D.; Spiga, S.; Capelli, S. C.; Lamagna, L.; Volkos, S. N.; Alia, M.; Fanciulli, M. Appl. Phys. Lett. 2007, 91, 102901
8. Zhao, Yi; Kita, K.; Kyuno, K.; Toriumi, A. Jpn. J. Appl. Phys. 2007, 46A, 4189-4192
9. Tsoutsou, D.; Scarel, G.; Debernardi, A.; Capelli, S. C.; Volkos, S. N.; Lamanga, L.; Schamm, S.; Coulon, P. E.; Fanciulli, M. Microelectron. Eng. 2008, 85, 2411-2413
10. Lagacheva, V. A.; Lukin, A. N.; Tikhonova, Y. A.; Lynov, A. A.; Pribytkov, D. M.; Khoviv, A. M. Inorg. Mater. 2008, 44, 1125-1129
11. Yang, C.; Fan, H.; Xi, Y.; Qiu, S.; Fu, Y. Thin Solid Films 2009, 517, 1677-1680
12. Briggs, D.; Beamson, G. Anal. Chem. 1992, 64, 1729-1736
13. Khassin, A. A.; Yurieva, T. M.; Kaichev, V. V.; Bukhtiyarov, V. I.; Budneva, A. A.; Paukshtis, E. A.; Parmon, V. N. J. Mol. Catal. A 2001, 175, 189-204
14. Hueso, J. L.; Caballero, A.; Ocaña, M.; González-Elipe, A. R. J. Catal. 2008, 257, 334-344
15. Ponce, S.; Peña, M. A.; Fierro, J. L. G. Appl. Catal., B 2000, 24, 193-205
16. van der Heide, P. A. W. J. Electron Spectrosc. Relat. Phenom. 2006, 151, 79-91
17. Scofield, J. H. J. Electron Spectrosc. Relat. Phenom. 1976, 8, 129-137
18. Burroughs, P.; Hamnett, A.; Orchard, A. F.; Thornton, G. J. Chem. Soc., Dalton Trans. 1976, 17, 1686-1698
19. Ledford, J. S.; Houalla, M.; Proctor, A.; Hercules, D. M.; Petrakis, L. J. Phys. Chem. 1989, 93, 6770-6777
20. Haack, L. P.; deVries, J. E.; Otto, K.; Chattha, M. S. Appl. Catal., A 1992, 82, 199-214
21. Shelef, M.; Haack, L. P.; Soltis, R. E.; Devries, J. E.; Logothetis, E. M. J. Catal. 1992, 137, 114-126
22. Galtayries, A.; Blanco, G.; Cifredo, G. A.; Finol, D.; Gatica, J. M.; Pintado, J. M.; Vidal, H.; Sporken, R.; Bernal, S. Surf. Interface Anal. 1999, 27, 941-949
23. Boukha, Z.; Fitian, L.; López-Haro, M.; Mora, M.; Ruiz, J. R.; Jiménez-Sanchidrián, C.; Blanco, G.; Calvino, J. J.; Cifredo, G. A.; Trasobares, S.; Bernal, S. J. Catal. 2010, 272, 121-130
24. Barr, T. L. J. Phys. Chem. 1978, 82, 1801-1810
25. Vasquez, R. P. Surf. Sci. Spectra 1993, 1, 361-366
26. Teterin, Yu.A.; Teterin, A.Yu. Russ. Chem. Rev. 2002, 71, 347-381
27. Nelson, A. J.; van Buuren, T.; Willey, T. M.; Bostedt, C.; Adams, J. J.; Schaffers, K. I.; Terminello, L.; Callcott, T. A. J. Electron Spectrosc. Relat. Phenom. 2004, 137-140, 541-546
28. Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G. J. Phys. D: Appl. Phys. 2009, 42, 035305
29. Suzer, S.; Sayan, S.; Banaszak Holl, M. M.; Garfunkel, E.; Hussain, Z.; Hamdan, N. M. J. Vac. Sci. Technol. A 2003, 21, 106-109
30. Smirnova, T. P.; Kaichev, V. V.; Yakovkina, L. V.; Kosyakov, V. I.; Beloshapkin, S. A.; Kuznetsov, F. A.; Lebedev, M. S.; Gritsenko., V. A. Inorg. Mater. 2008, 44, 965-970
31. Sarma, D. D.; Hegde, M. S.; Rao, C. N. R. J. Chem. Soc., Faraday Trans. 1981, 77, 1509-1520
32. Ikeue, K.; Ando, S.; Mitsuyama, T.; Ohta, Y.; Arayama, K.; Tsutsumi, A.; Machida, M. Top. Catal. 2008, 47, 175-180
33. Hwang, D. W.; Lee, J. S.; Li, W.; Oh, S. H. J. Phys. Chem. B 2003, 107, 4963-4970