Physical and electrical effects of the Dep-Anneal-Dep-Anneal (DADA) process for HfO2 in high K/metal gate stacks

ECS Transactions

Volumn 35, Issue 4, 2011, Pages 815-834

  Clark, R D ^a   Aoyama, S ^b   Consiglio, S ^a   Nakamura, G ^a   Leusink, G J ^a  

^a TEL TECHNOLOGY CENTER   (United States)

^b Tokyo Electron AT   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON NITRIDE; SILICON OXIDES; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL EFFECTS; HIGH RESOLUTION RUTHERFORD BACKSCATTERING SPECTROSCOPIES; HIGH-K/METAL GATES; NON-UNIFORMITIES; PHYSICAL ANALYSIS; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; POST-DEPOSITION ANNEAL; X RAY REFLECTIVITY;

NITROGEN COMPOUNDS;

EID: 79960867596     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3572321     Document Type: Conference Paper

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