Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 253-261

  Jagannathan, H ^a   Edge, L F ^a   Jamison, P ^a   Iijima, R ^b   Narayanan, V ^c   Paruchuri, V K ^a   Clark, R D ^d   Consiglio, S ^d   Wajda, C S ^d   Leusink, G J ^d  

^a IBM RESEARCH   (United States)

^b Toshiba America Inc   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d TEL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; BARIUM COMPOUNDS; CHEMICAL BONDS; ELECTRONEGATIVITY; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); LANTHANUM OXIDES; LEAKAGE CURRENTS; LOGIC GATES; MOSFET DEVICES; THRESHOLD VOLTAGE;

ATOMIC-LAYER DEPOSITION; BANDS EDGES; CAP LAYERS; DEPOSITION PROCESS; GATE STACKS; HIGH-Κ; METAL-GATE; MOSFETS; SCALINGS; THRESHOLD-VOLTAGE SHIFT;

GATE DIELECTRICS;

EID: 74949104959     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118951     Document Type: Conference Paper

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